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High-temperature ferromagnetism in epitaxial TiO2 film implanted with cobalt impurity at elevated temperature
Bazarov V.V.
1, Begishev E.M.
1, Valeev V. F.
1, Vakhitov I.R.
2, Gumarov A. I.
2,1, Zinnatullin A. L.
2, Kiiamov A. G.
2, Lyadov N. M.
1, Nuzhdin V. I.
1, Khaibullin R.I.
1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
2Kazan Federal University, Kazan, Russia
2Kazan Federal University, Kazan, Russia
Email: vbazarov1@gmail.com, begishev.evg@gmail.com, valeev@kfti.knc.ru, iskvakhitov@gmail.com, amir@gumarov.ru, AlLZinnatullin@kpfu.ru, Airatphd@gmail.com, nik061287@mail.ru, nuzhdin@kfti.knc.ru, rikkfti@mail.ru
It is shown that implantation of Co+ ions with an energy of 40 keV and a high dose of 1.25· 1017 ion/cm2 into a thin epitaxial TiO2 film heated to 873 K induces ferromagnetism with a Curie temperature above room temperature. According to the analysis of presented experimental data, the observed ferromagnetism is mainly due to the formation of cobalt nanoparticles of about 30 nm in size in the implanted TiO2 film. Keywords: ion implantation, titanium dioxide, diluted magnetic oxide semiconductors, oxygen vacancies, non-volatile memory.
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