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Czochralski growth of semi-insulating bulk iron-doped β-Ga2O3 crystals with a resistivity of 160 GΩ· cm
Bauman D.A.
1, Panov D.Iu.1, Spiridonov V.A.1, Bogdanov P.A.1, Ivanov A.Yu.1, Lundin V.V.2, Lundina E.Yu.3, Tsatsulnikov A.F.2,4, Romanov A.E.1,2, Brunkov P.N.2
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Monolum Ltd., St.-Petersburg, Russia
4Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Monolum Ltd., St.-Petersburg, Russia
4Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: dabauman@itmo.ru
In this work, bulk crystals of gallium oxide β-Ga2O3 doped with iron were grown by the Czochralski method. Analysis of X-ray diffraction spectra confirmed the presence of only the β-phase and high crystalline quality. The measured specific resistance was 160 GΩ· cm. Keywords: Bulk crystals, gallium oxide, semi-insulating substrates.
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- https://www.novelcrystal.co.jp/eng/wp-content/uploads/2024/ 08/5025c6a8c3a3723c996927ee1e3e7fa9.pdf
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