Biquadratic interlayer interaction in three-layer CoNi/Si/FeNi films
Patrin G. S.1,2, Vahitova Ya. A.2, Shiyan Ya. G.1,2, Kobyakov A. V.1,2, Yushkov V. I.1
1Siberian Federal University, Krasnoyarsk, Russia
2Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Email: patrin@iph.krasn.ru, zhivaya.yana@mail.ru, ysh@iph.krasn.ru, nanonauka@mail.ru, viyushkov@mail.ru

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The paper presents the results of experimental studies using the electron magnetic resonance method of three-layer CoNi/Si/FeNi films, where one layer is magnetically hard and the other is magnetically soft. It was found that the introduction of a non-magnetic semiconductor silicon interlayer significantly affects the interlayer interaction. When studying the angular dependences of the resonance fields related to different subsystems, a direct observation of the biquadratic interlayer interaction was obtained, which value depends both on the thickness of the silicon interlayer and on the measurement temperature. Keywords: magnetic resonance, exchange interaction, three-layer films, biquadratic interaction.
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