Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2025, issue 1 » Article p. 104
<<<>>>
Synthesis and characterization of arrays of Si-whiskers with SiC-coated tips
Russian version
Volchkov I. S. 1, Butashin A. V. 1, Givargizov M. E.1, Deryabin A. N.1, Kanevskii V. M. 1
1Kurchatov Complex Crystallography and Photonics, NRC “Kurchatov Institute” Moscow, Russia
Email: volch2862@gmail.com
PDF
Arrays of Si-whiskers of two types (with the ordered "classical" and "triangular" structures) coated on the tips with a thin layer of cubic SiC polytype (3C-SiC) were obtained. The results of X-ray phase analysis, energy-dispersive spectroscopy and Raman spectroscopy indicate the formation of thin layers of the said SiC polytype on the Si-whisker tips, as well as the presence of free fullerenelike carbon. On the triangular-structure samples where a portion of incoming Si vapor is spent on growing the film by the vapor-crystal mechanism, more intense formation of silicon oxide (SiO2) and polysilicic acids is observed, which is associated with a larger free area of the Si-substrate active surface. Keywords: silicon carbide, whiskers, Raman spectroscopy.
  1. V. Cimalla, J. Pezoldt, O. Ambacher, J. Phys. D: Appl. Phys., 40 (20), 6386 (2007). DOI: 10.1088/0022-3727/40/20/S19
  2. M. Agati, S. Boninelli, C. Calabretta, F. Mancarella, M. Mauceri, D. Crippa, M. Albani, R. Bergamaschini, L. Miglio, F. La Via, Mater. Des., 208, 109833 (2021). DOI: 10.1016/j.matdes.2021.109833
  3. Y.S. Wang, X.Z. Wang, Ceram. Int., 48 (17), 24571 (2022). DOI: 10.1016/j.ceramint.2022.05.101
  4. K. Wang, H. Wang, C. Chen, W. Li, L. Wang, F. Hu, F. Gao, W. Yang, Z. Wang, S. Chen, ACS Appl. Mater. Interfaces, 15 (19), 23457 (2023). DOI: 10.1021/acsami.3c02540
  5. K. Kishida, Y. Shinkai, H. Inui, Acta Mater., 187, 19 (2020). DOI: 10.1016/j.actamat.2020.01.027
  6. S. Smirnov, D. Vichuzhanin, A. Nesterenko, A. Smirnov, N. Pugacheva, A. Konovalov, Int. J. Mater. Form., 10 (5), 831 (2017). DOI: 10.1007/s12289-016-1323-6
  7. L.C. Hwa, S. Rajoo, A.M. Noor, N. Ahmad, M.B. Uday, Curr. Opin. Solid State Mater. Sci., 21 (6), 323 (2017). DOI: 10.1016/j.cossms.2017.08.002
  8. H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, N. Hatta, Phys. Status Solidi B, 245 (7), 1272 (2008). DOI: 10.1002/pssb.200844053
  9. G. Pensl, M. Bassler, F. Ciobanu, V. Afanasev, H. Yano, T. Kimoto, H. Matsunami, Mater. Res. Soc. Symp. Proc., 640, 32 (2001). DOI: 10.1557/PROC-640-H3.2
  10. G.Z. Yang, H. Cui, Y. Sun, L. Gong, J. Chen, D. Jiang, C.X. Wang, J. Phys. Chem. C, 113 (36), 15969 (2009). DOI: 10.1021/jp906167s
  11. Z.J. Li, K.H. Li, G.Y. Song, G.H. Qiu, L.N. Yang, A.L. Meng, J. Mater. Chem. C, 6 (24), 6565 (2018). DOI: 10.1039/C8TC01474D
  12. S.A. Kukushkin, A.V. Osipov, J. Phys. D: Appl. Phys., 47 (31), 313001 (2014). DOI: 10.1088/0022-3727/47/31/313001
  13. S.A. Kukushkin, A.V. Osipov, Tech. Phys. Lett., 46 (11), 1103 (2020). DOI: 10.1134/S1063785020110243
  14. A. Severino, C. Locke, R. Anzalone, M. Camarda, N. Piluso, A. La Magna, S.E. Saddow, G. Abbondanza, G. DArrigo, F. La Via, ECS Trans., 35 (6), 99 (2011). DOI: 10.1149/1.3570851
  15. J. Yamasaki, S. Inamoto, Y. Nomura, H. Tamaki, N. Tanaka, J. Phys. D: Appl. Phys., 45 (49), 494002 (2012). DOI: 10.1088/0022-3727/45/49/494002
  16. F. Iacopi, G. Walker, L. Wang, L. Malesys, S. Ma, B.V. Cunning, A. Iacopi, Appl. Phys. Lett., 102 (1), 011908 (2013). DOI: 10.1063/1.4774087
  17. E.I. Givargizov, Rost nitevidnykh b plastinchatykh kristallov iz para (Nauka, M., 1977). (in Russian)
  18. E.I. Givargizov, M.E. Givargizov, V.I. Ershov, N.I. Manshina, patent US 6816791 B1 (01.03.2005)
  19. E.I. Givargizov, A.N. Stepanova, L.L. Aksenova, E.V. Rakova, J.L. Hatchison, N.A. Kiselev, E.S. Mashkova, V.A. Molchanov, Cryst. Rep., 47, S159 (2002). DOI: 10.1134/1.1529970
  20. A. Alessi, G. Iovino, G. Buscarino, S. Agnello, F.M. Gelardi, J. Phys. Chem. C, 117 (6), 2616 (2013). DOI: 10.1021/jp310314t
  21. Q. Wen, Y. Feng, Z. Yu, D.-L. Peng, N. Nicoloso, E. Ionescu, R. Riedel, J. Am. Ceram. Soc., 99 (8), 2655 (2016). DOI: 10.1111/jace.14256

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru