Self-excitation of the microwave-range auto-oscillations in avalanche GaAs diodes
Rozhkov A. V.
1, Ivanov M. S.
1, Rodin P. B.
1
1Ioffe Institute, St. Petersburg, Russia
Email: rozh@hv.ioffe.rssi.ru, lygeon@gmail.com, rodin@mail.ioffe.ru
Self-excitation of microwave current oscillations has been observed experimentally in GaAs avalanche diodes connected in series with an ohmic load. The oscillation frequency varied from 5.3 to 8.2 GHz depending on the breakdown voltage (100 to 220 V), diameter (100 to 200 μm) and doping profile of the p+-p-i-n-n+-structure under study. The voltage and current amplitudes amounted to tens of volts and units of amperes. Numerical simulations have revealed that in the diode there occurs a self-oscillation process of generation and subsequent extraction of the non-equilibrium electron-hole package, which is accompanied by electric field screening by non-equilibrium carries. Stationary state of the diode with avalanche current is unstable on the positive differential resistance branch of the reverse current-voltage characteristic in the absence of external resonator. Keywords: high-voltage GaAs diodes, microwave oscillations, self-oscillations.
- M. Levinshtein, J. Kostamovaara, S. Vainshtein, Breakdown phenomena in semiconductors and semiconductor devices (World Scientific, 2005)
- A.S. Tager, Sov. Phys. Usp., 9 (6), 892 (1967). DOI: 10.1070/PU1967v009n06ABEH003231
- S.A. Darznek, S.K. Lyubutin, S.N. Rukin, B.G. Slovikovskii, Semiconductors, 36 (5), 599 (2002). DOI: 10.1134/1.1478555
- V.A. Kozlov, A.V. Rozhkov, A.F. Kardo-Sysoev, Semiconductors, 37 (12), 1428 (2003). DOI: 10.1134/1.1634667
- S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, S.N. Tsyranov, Semiconductors, 47 (5), 670 (2013). DOI: 10.1134/S1063782613050151
- A.V. Rozhkov, M.S. Ivanov, P.B. Rodin, Tech. Phys. Lett., 48 (8), 61 (2022). DOI: 10.21883/TPL.2022.08.55065.19271
- M. Ivanov, A. Rozkhov, P. Rodin, Solid State Commun., 379, 115420 (2024). DOI: 10.1016/j.ssc.2023.115420
- E. Schoell, Nonequilibrium phase transitions in semiconductors (Springer, Berlin, 1987)
- V.A. Kozlov, A.F. Kardo-Sysoev, V.I. Brylevskii, Semiconductors, 35 (5), 608 (2001). DOI: 10.1134/1.1371631
- V.M. Andreev, D.F. Zaytsev, N.YU. Novikov, V.S. Kalinovskiy, D.V. Mordasov, S.O. Slipchenko, I.S. Tarasov, A.I. Fadeev, Radiotekhnika, N 11, 177 (2016). (in Russian)
- D.F. Zaytsev, V.M. Andreev, I.A. Bilenko, A.A. Berezovsky, P.Yu. Vladislavsky, Yu.B. Gurfinkel, L.I. Tsevetkova, V.S. Kalinovskiy, N.M. Kondratev, V.N. Kosolobov, V.F. Kurochkin, S.O. Slipchenko, N.V. Smirnov, B.V. Yakovlev, Radiotekhnika, 85 (4), 153 (2021). DOI: 10.18127/j00338486-202104-17 (in Russian)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.