Gorai L. I.1,2,3,4, Kostromin N. A.1,2, Dashkov A. S.1,2, Buravlev A. D.1,3,4,5
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
4AN HEO "University associated with IA EAEC", Saint-Petersburg, Russia
5Ioffe Institute, St. Petersburg, Russia
Email: lig@pcgrate.com
Diffraction efficiencies of relief semiconductor gratings in the terahertz range (THz) have been obtained by numerical modeling, and the properties of relief semiconductor gratings with a triangular symmetric profile of strokes have been considered. It is shown that three types of resonances are supported in such gratings: plasmon-polariton resonances (PPR), Rayleigh resonances, and resonances related to the stroke depth. The dielectric permittivity of InSb, GaAs and Al0.3Ga0.7As at a given temperature was taken from literature data or calculations using the Drude-Lorentz model taking phonons into account. It is found that lattices of this type, unlike lattices with other stroke profiles, exhibit very deep and narrow PDP resonances, as well as Rayleigh resonances. Keywords: terahertz range, A3B5 semiconductors, triangular diffraction gratings, plasmon-polariton resonance.
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