Technical Physics Letters
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- 2023
- 2022
Spreading resistance microscopy for determination of the barrier layer parameters in nBn structures based on InSb
Savin K. A.
1, Klekovkin A. V.
1, Minaev I. I.
1, Eroshenko G.N.
1, Krivobok V. S.
1,2, Sviridov D. E.
1, Goncharov A. E.
2, Nikolaev S. N.
1
1Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
2Orion R&P Assoc, Moscow, Russia
2Orion R&P Assoc, Moscow, Russia
Email: savinkonstantin93@gmail.com, klekovkinav@lebedev.ru, i.minaev@lebedev.ru, er-grig@mail.ru, krivobokvs@lebedev.ru, sviridovde@lebedev.ru, ag93.orion@gmail.com, nikolaev-s@yandex.ru
A new approach is demonstrated that allows visualization of the electronic subsystem of InSb/InAlSb barrier-diode structures, evaluation of the homogeneity of the InAlSb layer that blocks majority carriers in such structures, and determination of the height of the corresponding potential barrier. The approach is based on measuring the spreading resistance on a freshly prepared (110) cleaved cross-section of the epitaxial heterostructure with a diamond-coated silicon probe. Keywords: current spreading resistance, molecular beam epitaxy, IR photodetector, InSb, barrier diode heterostructures.
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