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Recombination of charge carriers in CsPbBr3 films with high quantum photoluminescence efficiency
Russian version
Polushkin A. S.1, Makarov S. V.1,2
1ITMO University, St. Petersburg, Russia
2Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao, Shandong, China
Email: artem.polushkin@metalab.ifmo.ru, s.makarov@metalab.ifmo.ru
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This work examines perovskite thin films produced by two different methods: the scalable slot-die coating method and the classical spin-coating method. To model the recombination of charge carriers in these films, the proven ABC model was used, which allows us to calculate recombination constants based on photoluminescence decay and the photoluminescence quantum yield. In addition, data were analyzed at different pump powers, which made it possible to obtain recombination constants with higher accuracy. Keywords: halide perovskite, slot-die coating, luminescence decay, ABC- model.
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