Technical Physics Letters
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Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
Malevskaya A. V.
1, Kalyuzhnyy N. A.
1, Salii R. A.
1, Soldatenkov F. Yu.
1, Nakhimovich M. V.1, Malevskii D. A.
1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, r.saliy@mail.ioffe.ru, F.Soldatenkov@mail.ioffe.ru, NMar@mail.ioffe.ru, dmalevsky@mail.ioffe.ru
Investigations of back reflectors technology development for IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. Reflectors constructions based on multi-layer systems included layers of dielectric (SiO2), adhesive material (NiCr), metal with high reflector properties (Ag) and barrier stop-layers (Ti, Pt) have been developed. Analyzed was the influence of reflector compound on light-emitting diodes parameters. External quantum efficiency > 45% at current 100-350 mA and optical power >450 mW at current 800 mA were achieved. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, multi-layer reflector.
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