Technical Physics Letters
Volumes and Issues
Home » Technical Physics Letters » Year 2024, issue 9 » Article p. 67
<<<>>>
Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
Russian version
Malevskaya A. V. 1, Kalyuzhnyy N. A. 1, Salii R. A. 1, Soldatenkov F. Yu. 1, Nakhimovich M. V.1, Malevskii D. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, r.saliy@mail.ioffe.ru, F.Soldatenkov@mail.ioffe.ru, NMar@mail.ioffe.ru, dmalevsky@mail.ioffe.ru
PDF
Investigations of back reflectors technology development for IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. Reflectors constructions based on multi-layer systems included layers of dielectric (SiO2), adhesive material (NiCr), metal with high reflector properties (Ag) and barrier stop-layers (Ti, Pt) have been developed. Analyzed was the influence of reflector compound on light-emitting diodes parameters. External quantum efficiency > 45% at current 100-350 mA and optical power >450 mW at current 800 mA were achieved. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, multi-layer reflector.
  1. A.G. Entrop, A. Vasenev, Energy Proc., 132, 63 (2017). DOI: 10.1016/j.egypro.2017.09.636
  2. M. Kitamura, T. Imada, S. Kako, Y. Arakawa, Jpn. J. Appl. Phys., 43, 2326 (2004). DOI: 10.1143/JJAP.43.2326
  3. W. Wild, Proc. Est. Acad. Sci. Eng., 13, 436 (2007). DOI: 10.3176/eng.2007.4.15
  4. A.C. Watts, V.G. Ambrosia, E.A. Hinkley, Remote Sens., 4, 1671 (2012). DOI: 10.3390/rs4061671
  5. S.-C. Ahn, B.-T. Lee, W.-C. An, D.-K. Kim, I.-K. Jang, J.-S. So, H.-J. Lee, J. Korean Phys. Soc., 69, 91 (2016). DOI: 10.3938/jkps.69.91
  6. A.V. Malevskaya, N.A. Kalyuzhnyy, D.A. Malevskii, S.A. Mintairov, R.A. Salii, A.N. Pan'chak, P.V. Pokrovskii, N.S. Potapovich, V.M. Andreev, Fiz. Tekh. Poluprovodn., 55 (7), 614 (2021) (in Russian). DOI: 10.21883/FTP.2021.07.51028.9646
  7. A.V. Malevskaya, N.A. Kalyuzhnyy, D.A. Malevskii, S.A. Mintairov, A.M. Nadtochiy, M.V. Nakhimovich, F.Y. Soldatenkov, M.Z. Shvarts, V.M. Andreev, Semiconductors, 55 (8), 686 (2021). DOI: 10.1134/S1063782621080121
  8. A.V. Malevskaya, N.A. Kalyuzhnyy, F.Y. Soldatenkov, R.V. Levin, R.A. Salii, D.A. Malevskii, P.V. Pokrovskii, V.R. Larionov, V.M. Andreev, Tech. Phys., 68 (1), 161 (2023). DOI: 10.21883/TP.2023.01.55451.166-22
  9. H.-J. Lee, G.-H. Park, J.-S. So, C.-H. Lee, J.-H. Kim, L.-K. Kwac, Infrared Phys. Technol., 118, 103879 (2021). DOI: 10.1016/j.infrared.2021.103879
  10. H.-J. Lee, I.-K. Jang, D.-K. Kim, Y.-J. Cha, S.W. Cho, Micromachines, 13, 695 (2022). DOI: 10.3390/mi13050695
  11. H.-J. Lee, G.-H. Park, J.-S. So, J.-H. Kim, H.-G. Kim, L.-K. Kwac, Current Appl. Phys., 22, 36 (2021). DOI: 10.1016/j.cap.2020.12.002
  12. N.A. Kalyuzhnyy, A.V. Malevskaya, S.A. Mintairov, M.A. Mintairov, M.V. Nakhimovich, R.A. Salii, M.Z. Shvarts, V.M. Andreev, Solar Energy Mater. Solar Cells, 262, 112551 (2023). DOI: 10.1016/j.solmat.2023.112551

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru