Back reflector influence on the parameters of infrared light-emitting diodes based on AlGaAs/GaAs heterostructure
Malevskaya A. V.
1, Kalyuzhnyy N. A.
1, Salii R. A.
1, Soldatenkov F. Yu.
1, Nakhimovich M. V.
1, Malevskii D. A.
11Ioffe Institute, St. Petersburg, Russia
Email: amalevskaya@mail.ioffe.ru, nickk@mail.ioffe.ru, r.saliy@mail.ioffe.ru, F.Soldatenkov@mail.ioffe.ru, NMar@mail.ioffe.ru, dmalevsky@mail.ioffe.ru
Investigations of back reflectors technology development for IR (850 nm) light-emitting diodes based on AlGaAs/GaAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. Reflectors constructions based on multi-layer systems included layers of dielectric (SiO2), adhesive material (NiCr), metal with high reflector properties (Ag) and barrier stop-layers (Ti, Pt) have been developed. Analyzed was the influence of reflector compound on light-emitting diodes parameters. External quantum efficiency > 45% at current 100-350 mA and optical power >450 mW at current 800 mA were achieved. Keywords: IR light-emitting diode, AlGaAs/GaAs heterostructure, multi-layer reflector.
- A.G. Entrop, A. Vasenev, Energy Proc., 132, 63 (2017). DOI: 10.1016/j.egypro.2017.09.636
- M. Kitamura, T. Imada, S. Kako, Y. Arakawa, Jpn. J. Appl. Phys., 43, 2326 (2004). DOI: 10.1143/JJAP.43.2326
- W. Wild, Proc. Est. Acad. Sci. Eng., 13, 436 (2007). DOI: 10.3176/eng.2007.4.15
- A.C. Watts, V.G. Ambrosia, E.A. Hinkley, Remote Sens., 4, 1671 (2012). DOI: 10.3390/rs4061671
- S.-C. Ahn, B.-T. Lee, W.-C. An, D.-K. Kim, I.-K. Jang, J.-S. So, H.-J. Lee, J. Korean Phys. Soc., 69, 91 (2016). DOI: 10.3938/jkps.69.91
- A.V. Malevskaya, N.A. Kalyuzhnyy, D.A. Malevskii, S.A. Mintairov, R.A. Salii, A.N. Pan'chak, P.V. Pokrovskii, N.S. Potapovich, V.M. Andreev, Fiz. Tekh. Poluprovodn., 55 (7), 614 (2021) (in Russian). DOI: 10.21883/FTP.2021.07.51028.9646
- A.V. Malevskaya, N.A. Kalyuzhnyy, D.A. Malevskii, S.A. Mintairov, A.M. Nadtochiy, M.V. Nakhimovich, F.Y. Soldatenkov, M.Z. Shvarts, V.M. Andreev, Semiconductors, 55 (8), 686 (2021). DOI: 10.1134/S1063782621080121
- A.V. Malevskaya, N.A. Kalyuzhnyy, F.Y. Soldatenkov, R.V. Levin, R.A. Salii, D.A. Malevskii, P.V. Pokrovskii, V.R. Larionov, V.M. Andreev, Tech. Phys., 68 (1), 161 (2023). DOI: 10.21883/TP.2023.01.55451.166-22
- H.-J. Lee, G.-H. Park, J.-S. So, C.-H. Lee, J.-H. Kim, L.-K. Kwac, Infrared Phys. Technol., 118, 103879 (2021). DOI: 10.1016/j.infrared.2021.103879
- H.-J. Lee, I.-K. Jang, D.-K. Kim, Y.-J. Cha, S.W. Cho, Micromachines, 13, 695 (2022). DOI: 10.3390/mi13050695
- H.-J. Lee, G.-H. Park, J.-S. So, J.-H. Kim, H.-G. Kim, L.-K. Kwac, Current Appl. Phys., 22, 36 (2021). DOI: 10.1016/j.cap.2020.12.002
- N.A. Kalyuzhnyy, A.V. Malevskaya, S.A. Mintairov, M.A. Mintairov, M.V. Nakhimovich, R.A. Salii, M.Z. Shvarts, V.M. Andreev, Solar Energy Mater. Solar Cells, 262, 112551 (2023). DOI: 10.1016/j.solmat.2023.112551
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