Formation of InAs1-xNx islands and InAs stem-assisted InAs1-xNx nanowires by means of epitaxial growth on silicon
Kaveev A. K.1, Miniv D.V.2, Fedorov V. V.2
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Email: kaveev@mail.ioffe.ru

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The possibility of forming InAs1-xNx nanowires on InAs stems on the Si(111) surface coated with partly destructed silicon oxide was demonstrated. Formation of parasitic islands was also detected. It was revealed that in the first case the predominantly wurtzite structural phase is formed, while in the second case the sphalerite structural phase dominates. Keywords: InAs1-xNx, dilute nitride, nanowires, molecular beam epitaxy.
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