I.V. Ivashentseva1, P.V. Fedotov2,3, N.S. Kaurova1, M.G. Rybin2, E.D. Obraztsova2,3, I.V. Tretyakov4, I.V. Tretyakov1
1Moscow Pedagogical State University, Moscow, Russia
2Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
4Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
Email: ivantretykov@mail.ru
The work presents a technology for sensitizing a structure consisting of a graphene nanostrip on a Si/GNR silicon substrate in the near-IR range of the electromagnetic spectrum based on doping a GNR graphene nanostrip with He4. The response has been experimentally demonstrated to increase by more than 25 times at a wavelength of 1.35 μm in the Si/GNR/He4 structure compared to undoped Si/GNR. Also, the Si/GNR_He4 structure exhibits pronounced multi-level memristor properties under the influence of IR radiation. Keywords: graphene, graphene nanostrip, IR range, detector.
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