Shaposhnikov R. A.1, Zagaynov N.V.1, Polkovnikov V. N.1, Chkhalo N. I.1, Garakhin S. A.1, Zuev S. Yu.1
1Institute for physics of microstructure RAS, Nizhny Novgorod, Russia
Email: shaposhnikov-roma@mail.ru
The paper presents the results of a study of the reflective characteristics and structural parameters of multilayer X-ray mirrors based on a pair of Ru/B4C materials, optimized for the spectral range 67-90 Angstrem. A comparison of these structures with Mo/B4C and La/B4C mirrors is presented. Keywords: multilayer X-ray mirrors, synchrotron applications, X-ray monochromators, X-ray lithography.
- A. Pirati, J. van Schoot, K. Troost, R. van Ballegoij, P. Krabbendam, J. Stoeldraijer, E. Loopstra, J. Benschop, J. Finders, H. Meiling, E. van Setten, N. Mika, J. Dredonx, U. Stamm, B. Kneer, B. Thuering, W. Kaiser, T. Heil, S. Migura. Proc. SPIE., 10143, 101430G (2017). DOI: 10.1117/12.2261079
- N.I. Chkhalo, N.N. Salashchenko. AIP Advances, 3 (8), 082130 (2013). DOI: 10.1063/1.4820354
- Electronic media. Available at: https://www.asml.com/en/products/euv-lithography-systems
- N.N. Salashchenko, N.I. Chkhalo. Her. Russ. Acad. Sci., 78, 279 (2008). DOI: 10.1134/S1019331608030155
- S.S. Churilov, R.R. Kildiyarova, A.N. Ryabtsev, S.V. Sadovsky. Phys. Scr., 80, 045303 (2009). DOI:10.1063/1.3524494
- Otsuka, D. Kilbane, J. White, T. Higashiguchi, N. Yugami, T. Yatagai, W. Jiang, A. Endo, P. Dunne, G. O'Sullivan. Appl. Phys. Lett., 97, 111503 (2010). DOI: 10.1063/1.3490704
- S. A. Garakhin, V. N. Polkovnikov, N. I. Chkhalo. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 3, 10 (2019) (in Russian). DOI: 10.1134/S0207352819030077
- A.A. Akhsakhalyan, Yu. A. Vayner, S. A. Garakhin, K. A. Elina, P. S. Zavertkin, S. Yu. Zuev, D. V. Ivlyushkin, A. N. Nechay, A.D. Nikolenko, D. E. Paryev, R. S. Pleshkov, V. N. Polkovnikov, N.. N. Salashchenko, M. V. Svechnikov, N. I. Chkhalo. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 1, 14 (2019) (in Russian). DOI: 10.1134/S0207352819010025
- J. K. Lepson, P. Beiersdorfer, J. Clementson, M.F. Gu, M. Bitter, L. Roquemore, R. Kaita, P.G. Cox, A.S. Safronova. J. Phys. B: At. Mol. Opt. Phys., 43, 144018 (2010). DOI: 10.1088/0953-4075/43/14/144018
- S.S. Andreev, M.M. Barysheva, N.I. Chkhalo, S.A. Gusev, A.E. Pestov, V.N. Polkovnikov, D.N. Rogachev, N.N. Salashchenko, Yu.A. Vainer, S.Yu. Zuev. Tech. Phys., 55 (8), 168 (2010). DOI: 10.1134/S1063784210080153
- N.I. Chkhalo, S. Kunstner, V.N. Polkovnikov, N.N. Salashchenko, F. Schafers, S.D. Starikov. Appl. Phys. Lett., 102, 011602 (2013). DOI: 10.1063/1.4774298
- P. Naujok, S. Yulin, N. Kaiser, A. Tunnermann. Proc. SPIE, 9422, 94221K-1 (2015). DOI: 10.1117/12.2085764
- D.S. Kuznetsov, A.E. Yakshin, J.M. Sturm, R.W.E. van de Kruijs, E. Louis, F. Bijkerk. Opt. Lett., 40 (16), 3778 (2015). DOI: 10.1364/OL.40.003778
- T.D. Nguyen, R. Gronsky, J.B. Kortricht. Mat. Res. Soc. Symp. Proc., 280, (1993). DOI: 10.1557/PROC-280-161
- C. Borel, C. Morawe, A. Rommeveaux, C. Huguenot, J.-C. Peffen. Proc. SPIE, 6317, 63170I-1 (2006). DOI: 10.1117/12.678472
- Ch. Borel, Ch. Morawe, E. Ziegler, Th. Bigault, J.-Y. Massonnat, J.-Ch. Peffen, E. Debourg. Proc. SPIE, 5918, 591801 (2005). DOI: doi.org/10.1117/12.613873
- Qiushi Huang, Yang Liu, Yang Yang, Runze Qi, Yufei Feng, I.V. Kozhevnikov, Wenbin Li, Zhong Zhang, Hui Jiang, Ling Zhang, Aiguo Li, Jie Wang, Zhanshan Wang. Opt. Express, 26 (17), 21803 (2018). DOI: 10.1364/OE.26.021803
- I.G. Zabrodin, B.A. Zakalov, I.A. Kaskov, E.B. Klyuenkov, V.N. Polkovnikov, N.N. Salashchenko, S.D. Starikov, L.A. Suslov. Poverkhnost. Rentgenovskie, sinkhrotronnye i neytronnye issledovaniya 7, 37 (2013) (in Russian). DOI: 10.7868/S0207352813070202
- M.S. Bibishkin, N.I. Chkhalo, A.A. Fraerman, A.E. Pestov, K.A. Prokhorov, N.N. Salashchenko, Yu.A. Vainer. Nucl. Instrum. Methods Phys. Res. A, 543, 333 (2005). DOI: 10.1016/j.nima.2005.01.251
- M.J. Svechnikov. Appl. Crystallogr., 53 (1), 244 (2020). DOI: 10.1107/S160057671901584X
- R.M. Smertin, N.I. Chkhalo, V.N. Polkovnikov, N.N. Salashchenko, R.A. Shaposhnikov, S.Yu. Zuev. Thin Solid Films, 782, 140044 (2023). DOI: 10.1016/j.tsf.2023.140044
- R. Shaposhnikov, V. Polkovnikov, S. Garakhin, Y. Vainer, N. Chkhalo, R. Smertin, K. Durov, E. Glushkov, S. Yakunin, M. Borisov. J. Synchrotron Rad., 31, 268 (2024). DOI: 10.1107/S1600577524000419
- V.E. Asadchikov, I.N. Bukreeva, A. Duparre, I.V. Kozhevnikov, Y.S. Krivonosov, C. Morawed, M.V. Pyatakhin, J. Steinert, A.V. Vinogradov, E. Ziegle. Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries II Proceed. V. 4449, (2001). DOI: 10.1117/12.450102
- M. Bass. Handbook of Optics, 1, 1 (1995).
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