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Development of the cryogenic load for 1.1-1.4 mm sideband separating SIS-mixer
Khudchenko A.V.
1,2, Rudakov K. I.1,2, Tretyakov I. V.1, Chekushkin A. M.2, Mutaev I. A.3, Koshelets V.P.1,2
1Astro Space Center of P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
2Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
3Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: khudchenko@asc.rssi.ru, rudakov@asc.rssi.ru
This paper describes the design of a waveguide load for a cryogenic sideband separating receiver based on SIS mixers for the 1.1-1.4 mm range. The load is designed as a metal insert in the center of the waveguide. The insert is based on 125 μm thick quartz substrate with a deposited 8 nm thick NiCr film, which has a resistance of about 250 Ω/sq. Measurements demonstrate the variations of the film resistance to be within 5 percent while temperature changes from 300 to 4.2 K. Simulations show that the load reflection level can be expected to be less than -35 dB in the 220-330 GHz range. Keywords: waveguide load, thin metal film, SIS waveguide mixers, sideband separating mixers.
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