Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
Zubov F.I. 1, Shernyakov Yu.M.2, Beckman A.A.2, Moiseev E.I.1, Salii (Guseva) Yu.A.2,1, Kulagina M.M.2, Kalyuzhnyy N.A.2, Mintairov S.А.2, Maximov M.V.1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: fedyazu@mail.ru, yuri.shernyakov@mail.ioffe.ru, Arts@mail.ioffe.ru, moiseev@spbau.com, Guseva.Julia@mail.ioffe.ru, Marina.Kulagina@mail.ioffe.ru, Nickk@mail.ioffe.ru, Mintairov@scell.ioffe.ru, maximov.mikh@gmail.com

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Light-current characteristics of half-disk microlasers with active region based on InGaAs/GaAs quantum well-dots emitting at wavelength of 1090 nm are studied. The devices were fabricated by cleaving 200 μm in diameter microdisks with 10 μm wide ring contacts. The maximal achieved CW output optical power amounted to 110 mW. Lasing was observed up to 113oC. Keywords: microlaser, half-disk resonator, whispering gallery modes, quantum well-dots.
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