Technical Physics
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Effect of thermal annealing on properties Ga2O3/GaAs:Cr heterostructures
Kalygina V. M.
1, Kiseleva O. S.1, Kopyev V. V.
1, Kushnarev B. O.
1, Oleinik V. L.
1, Petrova Y. S.
1, Tsymbalov A. V.
1
1Tomsk State University, Tomsk, Russia
Email: Kalygina@ngs.ru
Data on the sensitivity of Ga2O3/GaAs:Cr heterostructures are presented to long-wave and UV (λ=254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga2O3 film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500oC for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second. Keywords: dark current, photocurrent, UV radiation, Ga2O3/GaAs:Cr structures, autonomous operation mode.
- W. Mi, J. Ma, Z. Li, C. Luan, H. Xiao. J. Mater. Sci.: Mater. Electron, 26, 7889 (2015). DOI: 10.1007/s10854-015-3440-2
- Y. Zhang, F. Alema, A. Mauze, O.S. Koksaldi, R. Miller, A. Osinsky, J.S. Speck, APL Mater., 7, 022506 (2019). https://doi.org/10.1063/1.5058059
- T. Uchida, R. Jinno, S. Takemoto, K. Kaneko, S. Fujita, Jpn. J. Appl. Phys., 57 (4), 040314 (2018). DOI: 10.7567/JJAP.57.040314
- X. Wang, Z. Chen, D. Guo, X. Zhang, Z. Wu, P. Li, W. Tang. Opt. Mater. Express, 8 (9), 2918 (2018). https://doi.org/10.1364/OME.8.002918
- Z. Li, Z. An, Y. Xu, Y. Cheng, Y. Cheng, D. Chen, Q. Feng, S. Xu, J. Zhang, C. Zhang, Y. Hao. J. Mater. Sci., 54, 10335 (2019)
- M.-Q. Lia, N. Yanga, G.-G. Wanga, H.-Y. Zhanga, J.-C.Hana. Appl. Surf. Sci., 471, 694 (2019). https://doi.org/10.1016/j.apsusc.2018.12.045
- V.M. Kalygina, V.V. Vishnikina, Yu.S. Petrova, I.A. Prudaev, T.M. Yaskevich. FTP, 49 (3), 357 (2015) (in Russian)
- J. Yua, J. Louc, Z. Wang, S. Jic, J.Chend, M. Yub, B. Peng, Y. Hu, L. Yuan, Y. Zhang, R. Jia. J. Alloys Compd., 872, 159508 (2021)
- M. Hong, J.P. Mannaerts, J.E. Bower, J. Kwo, M. Passlack, W.-Y. Hwang, L.W. Tu. J. Cryst. Growth, 175, 422 (1997)
- M. Holland, C.R. Stanley, W. Reid, R.J.W. Hill, D.A.J. Moran, I. Thayne, G.W. Paterson, A.R. Long. J. Vac. Sci. Technol. B, 25, 1706 (2007). https://doi.org/10.1116/1.2778690
- J. Hwang, C.C. Chang, M.F. Chen, C.C. Chen, K. Lin, F.C. Tang, M. Hong, J. Kwo. J. Appl. Phys., 94 (1), 348 (2003)
- P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, G. Chu, S. Nakahara, J.P. Mannaerts, M. Hong, K.K. Ng, J.D. Bu. Appl. Phys. Lett., 83 (1), 180 (2003)
- X. Zhang, D. Jiang, M. Zhao, H. Zhang, M. Li, M. Xing, J. Han, A.E. Romanov. J. Phys.: Conf. Series, 1965, 012066 (2021). DOI: 10.1088/1742-6596/1965/1/012066
- B.R. Tak, M.-M. Yang, M. Alexe, R. Singh. Cryst., 11 (9), 1046 (2021). https://doi.org/10.3390/cryst11091046
- L. Huang, Q. Feng, G. Han, F. Li, X. Li, L.Fang, X. Xing, J. Zhang, Y. Hao. IEEE Photon. J., 9 (4), 6803708 (2017)
- Y. Qin, S. Long, H. Dong, Q. He, G. Jian, Y. Zhang, X. Hou, P. Tan, Z. Zhang, H. Lv, Q. Liu, M. Liu. Chin. Phys. B, 28 (1), 018501 (2019). DOI: 10.1088/1674-1056/28/1/018501
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.