I. Yu. Pashen’kin1, E.V. Skorokhodov1, M.V. Sapozhnikov1,2, A.A.Fraerman1, G.A.Kichin3, K.A. Zvezdin3,4
1 Institute for Physics of Microstructures, Russian Academy of Sciences, branch of the Federal Research Center "Institute of Applied Physics of the Russian Academy of Sciences", Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3New Spintronic Technologies, Moscow, Russia
4Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
Email: evgeny@ipmras.ru
A new method was offered to design tunnel magnetoresistive CoFeB/MgO/CoFeB contacts with free layer vortex magnetization configuration. Contacts are made using electron-beam lithography methods and have lateral sizes of ~ 700 nm. The achieved tunnel magnetoresistance effect was equal to 80-120% for various samples. Thanks to low coercitivity, the magnetoresistance curve has a linear section without magnetic hysteresis that corresponds to vortex offset from the central position. Such types of contacts show spin-transfer diode properties - they feature rectification of high-frequency signals on vortex magnetization configurations. Key words: magnetic tunnel contacts, spin-transfer diode effect, vortex spin-transfer nanooscillators.
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