Comment to the paper by A.I. Tolmachev and L. Forlano Depemdence of the sputtering yield on the angle of ion incidence on the target surface" (2022, V. 92. Issue 5. P. 660-664)
Shulga V. I.1
1Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia
Email: vish008@yandex.ru

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A criitical analysis of the approach applied by A.I. Tolmachev and L. Forlano (ZhTF, 92 (5), 660 (2022)) to solving the problem of ion sputtering of solids is presented. Keywords: sputtering, angular dependence of the sputtering yield, computer simulation, program PAOLA, program SRIM, transport equation, binary collisions.
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