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Change of the loop directions on the high-frequency capacitance-voltage characteristics at a critical bias voltage, dielectric properties and memory effects in the Sr0.6Ba0.4Nb2O6/SrTiO3/Si(001) heterostructure
Russian version
Pavlenko A. V. 1
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
Email: Antvpr@mail.ru
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A c-oriented barium-strontium niobate film of composition Sr0.6Ba0.4Nb2O6 (SBN60) with a thickness of 600 nm was grown by high-frequency cathode sputtering on a Si(001) substrate with a preliminarily deposited SrTiO3 (STO) sublayer. It is shown that the film belongs to the relaxor ferroelectrics. When analyzing the high-frequency capacitance-voltage characteristics of the SBN60/STO/Si(001) heterostructure at U=0-24 V, a critical electric voltage (~ 10 V) was established, in the vicinity of which a change in the C(U) loop direction was observed. It is shown that the reason of loop direction change may be due to an increase in the role of the built-in charge, which is formed at the film-substrate interface, as the amplitude U increases, simultaneously with ferroelectric polarization switching in the SBN60 film. The causes of the revealed regularities and their role in the study of memory effects in the SBN60/STO/Si(001) heterostructure are discussed. Keywords: barium-strontium niobate (SBN), metal-ferroelectric-semiconductor structures, thin films.
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