Technical Physics Letters
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- 2024
- 2023
- 2022
Growth of β-Ga2O3 single crystals by the solution-melt method
The modes of growth of Ga2O3 crystals from a solution of gallium oxide in a MoO3 melt in the process of MoO3 evaporation at a temperature of 1050oC have been studied. It is shown that at this temperature the Ga2O3 crystalline phase is in equilibrium with the MoO3 melt. As a result of the experiments, single crystals of β-Ga2O3 were obtained up to 1.5 mm in cross section. The composition and structure of the crystals were studied by X-ray diffraction and electron microscopy. Keywords: gallium oxide, crystal growth, wide gap semiconductor. DOI: 10.61011/TPL.2023.07.56446.19589
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