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Gettering effect in Cr/4H-SiC UV photodetectors under ptoton irradiation vith E=15 Mev
The mechanism of structure transformation in Cr/4H-SiC UV photodetectors, which is responsible for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.. Keywords: vacancies, clusters, gettering.
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Дата начала обработки статистических данных - 27 января 2016 г.