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- 2023
- 2022
Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate
Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2-5)·10-6 Ω·cm2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm2 square) series resistance was 0.16 Ω. Optical power 270 mW at current 1.5 A has been achieved. Keywords: AlGaAs/GaAs- heterostructure, light-emitting diode, transfer to carrier-substrate, Au-In- compound, ohmic contacts.
- E.F. Shubert. Light-Emitting Diodes (second edition) (Cambridge University Press, 2006)
- Patent US6784462 (2004)
- Electronic source. "EPISTAR Corporation" https://www.epistar.com/EpistarEn/prodInfo
- A.V. Malevskaya, N.A. Kalyuzhnyy, D.A. Malevskii, S.A. Mintairov, A.M. Nadtochiy, M.V. Nakhimovich, F.Y. Soldatenkov, M.Z. Shvarts, V.M. Andreev. Semiconductors, 55 (8), 686 (2021). DOI: 10.1134/S1063782621080121.
- A.V. Malevskaya, N.A. Kalyuzhnyy, S.A. Mintairov, R.A. Salii, D.A. Malevskii, M.V. Nakhimovich, V.R. Larionov, P.V. Pokrovskii, M.Z. Shvarts, B.M. Andreev. Semiconductors, 56 (14), 2166 (2022). DOI: 10.21883/SC.2022.14.53866.9711
- Ch.C. Lee, Ch.Y.Wang, G. Matijasevic. Transaction Components, Nybrids, Manufactur. Tech., 16 (3), 311 (1993). DOI:10.1109/33.232058
- Y.-Ch. Sohn, Q. Wang, S.-J. Ham, B.-G. Jeong, K.-D. Jung, M.-S. Choi, W.-B. Kim, Ch.-Y. Moon. Electronic Components and Technology Conference (2007). DOI: 10.1109/ECTC.2007.373863
- A.G. Baca, F. Ren, J.C. Zolper, R.D. Briggs, S.J. Pearton. Thin Solid Films, 309, 599 (1997)
- P.H. Hao, L.C. Wang, Fei Deng, S.S. Lau, J.Y. Cheng. J. Appl. Phys., 79, 4211 (1996)
- D.M. Mitin, F.Yu. Soldatenkov, A.M. Mozharov, A.A. Vasil'ev, V.V. Neplokh, I.S. Mukhin. Nanosystems: Physics, Chemistry, Mathematics, 9 (6), 789 (2018). DOI:10.17586/2220-8054-2018-9-6-789-792
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Дата начала обработки статистических данных - 27 января 2016 г.