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Investigation of power IR (850 nm) light-emitting diodes manufacturing by lift-off technique of AlGaAs-GaAs- heterostructure to carrier-substrate
Development of lift-off technique of AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2-5)·10-6 Ω·cm2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm2 square) series resistance was 0.16 Ω. Optical power 270 mW at current 1.5 A has been achieved. Keywords: AlGaAs/GaAs- heterostructure, light-emitting diode, transfer to carrier-substrate, Au-In- compound, ohmic contacts.
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Дата начала обработки статистических данных - 27 января 2016 г.