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Physical foundations of the formation of the silicon-based heterovarizonic structure
With the formation of binary unit cells based on the AII and BVI, AIII and BV elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 μm. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with λ=0.1-3 μm, i.e., it covers the entire solar spectrum. Keywords: silicon, photocell, solar cell, heterovarizonic structure, photovoltaics, AIIBVI, AIII, BV compounds.
- X. Ru, M. Qu, J. Wang, T. Ruan, M. Yang, F. Peng, W. Long, K. Zheng, H. Yan, X. Xu. Solar Energy Mater. Solar Cells, 215, 110643 (2020)
- M.A. Green, E.D. Dunlop, D.H. Levi, J. Hohl-Ebinger, M. Yoshita, A.W.Y. Ho-Baillie. Progr. Photovoltaics: Res. Applicat., 27, 565 (2019)
- V.A. Milichko, A.S. Shalin, I.S. Mukhin, A.E. Kovrov, A.A. Krasilin, A.V. Vinogradov, P.A. Belov, C.R. Simovski. Phys. Usp., 59 (8), 727 (2016)
- Zh.I. Alferov, Izbrannyye trudy. Nanotekhnologii (Magistr-press, M., 2013) (in Russian)
- A. Louwen, W. Sark, R.Schropp, A. Faaij. Solar Energy Mater. Solar Cells, 147, 295 (2016)
- M. Yamaguchi, K.H. Lee1, K. Araki, N. Kojima. J. Phys. D: Appl. Phys., 51, 133002 (2018)
- S. Abdul Hadi, E.A. Fitzgerald, S. Griffiths, A. Nayfeh. J. Renewable Sustainable Energy, 10, 015905 (2018)
- M.A. Putyato, N.A. Valisheva, M.O. Petrushkov, V.V. Preobrazhensky, I.B. Chistokhin, B.R. Semyagin, E.A. Emelyanov, A.V. Vasev, A.F. Skachkov, G.I. Yurko, I.I. Nesterenko. ZhTF 89 (7), 1071 (2019) (in Russian). DOI: 10.21883/JTF.2019.07.47802.438-18
- K. Chen, R. Kapadia, A. Harker, S. Desai, J.S. Kang, S. Chuang, M. Tosun, C.M. Sutter-Fella, M. Tsang, Y. Zeng, D. Kiriya, J. Hazra, S.R. Madhvapathy, M. Hettick, Yu-Ze Chen, J. Mastandrea, M. Amani, S. Cabrini, Yu-Lun Chueh, J.W. Ager III, D.C. Chrzan, A. Javey. Nature Commun., 7, 10502 (2016). DOI: 10.1038/ncomms10502
- N.D. Gudkov. ZTF, 63 (5), 105 (1993) (in Russian)
- C.-X. Zhao, Y. Huang, J.-Q. Wang, C.-Y. Niu, Y. Jia. Phys. Lett. A. 383, 125903 (2019)
- M.K. Bakhadyrhanov, U.X. Sodikov, D. Melibayev, Tuerdi Wumaier, S.V.Koveshnikov, K.A. Khodjanepesov, Jiangxiang Zhan. J. Mater. Sci. Chem. Eng., 6, 180 (2018). DOI: 10.4236/msce.2018.64017
- M.K. Bakhadyrkhanov, S.B. Isamov, Kh.M. Iliev, S.A. Tachilin, K.U. Kamalov. Appl. Sol. Energy, 50 (2), 61 (2014)
- M.K. Bakhadyrhanov, U.X. Sodikov, Kh.M. Iliev, S.A. Tachilin, T. Wumaier, Mater. Phys. Chem., 1, 89 (2019)
- S. Adachi. Properties of group-IV, III-V and II-VI semiconductors (England: John Wiley \& Sons Ltd, 2005)
- B.I. Boltax. Diffuziya i tochechnye defekty v poluprovodnikakh (Nauka, L., 1972) (in Russian)
- D.V. Saparov, M.S. Saidov, A.S. Saidov. Appl. Solar Energy. 52 (3), 236 (2016)
- A.S. Saidov, M.S. Saidov, Sh.N. Usmonov, K.T. Kholikov, D. Saparov. Appl. Solar Energy, 43 (3), 183 (2007)
- S. Haridoss, F. Beni\`ere, M. Gauneau, A. Rupert. J. Appl. Phys., 51 (11), 5833 (1980)
- Y. Sato, I. Sakaguchi, H. Haneda. Jpn. J. Appl. Phys., 43 (12), 8024 (2004)
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