Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses
Gavrilova T. P.1, Farrakhov B.F.1, Fattakhov Ya.V.1, Khantimerov S. M.1, Nuzhdin V. I. 1, Rogov A. M.1, Valeev V. F.1, Konovalov D.A.1, Stepanov A. L.1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: tatyana.gavrilova@gmail.com, aanstep@gmail.com

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Single-crystal c-Ge plates implanted with Ag+ ions with an energy of E=30 keV, current density of the ion beam J = 5 μA/cm2 and a dose of D = 2.5· 1016 ion/cm2 were subjected to rapid thermal annealing by single light pulses of various durations from 1 up to 9.5 s. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag : PGe layer of spongy structure, consisting of Ge nanowires, is formed on the surface of c-Ge substrates. It was found that the annealing with an increase in the pulse duration up to 5 s successively leads to an increase in the Ge nanowire diameters from 26 to 35 nm. With longer pulses, the porous Ag : PGe structure is destroyed and Ag evaporates from the implanted layers. Keywords: nanoporous germanium, ion implantation, rapid thermal annealing.
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