Technical Physics
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Change in the surface state of the single-crystal germanium as a result of implantation with silver ions and annealing with light pulses
Single-crystal c-Ge plates implanted with Ag+ ions with an energy of E=30 keV, current density of the ion beam J = 5 μA/cm2 and a dose of D = 2.5· 1016 ion/cm2 were subjected to rapid thermal annealing by single light pulses of various durations from 1 up to 9.5 s. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag : PGe layer of spongy structure, consisting of Ge nanowires, is formed on the surface of c-Ge substrates. It was found that the annealing with an increase in the pulse duration up to 5 s successively leads to an increase in the Ge nanowire diameters from 26 to 35 nm. With longer pulses, the porous Ag : PGe structure is destroyed and Ag evaporates from the implanted layers. Keywords: nanoporous germanium, ion implantation, rapid thermal annealing.
- S. Prucnal, L. Rebohle, W. Skorupa. Mater. Sci. Semicond. Process., 62, 115 (2017). DOI: 10.1016/j.mssp.2016.10.040
- S. Prucnal, J. Zuk, R. Hubner, J. Duan, M. Wang, K. Pyszniak, A. Drozdziel, M. Turek, S. Zhou. Materials, 13, 1408 (2020). DOI: 10.3390/ma13061408
- T.P. Gavrilova, S.M. Khantimerov, V.I. Nuzhdin, V.F. Valeev, A.M. Rogov, A.L. Stepanov. Pis'ma v ZhTF 48, 33 (2022). (in Russian). DOI: 10.21883/PJTF.2022.08.52364.19096
- A.L. Stepanov, V.I. Nuzhdin, A.M. Rogov, V.V. Vorob'ev. Formirovanie cloev poristogo kremniya i germaniya s metallicheskimi nanochastitsami (Izd-vo FITs KazNTs RAN, Kazan, 2019) (in Russian)
- P.W. Voorhees. J. Stat. Phys., 38, 231 (1985). DOI: 10.1007/BF01017860
- A.F. Lopeandi a, J. Rodri guez-Viejo. Thermochim. Acta, 461, 82 (2007). DOI: 10.1016/j.tca.2007.04.010
- H. Liu, S. Li, P. Sun, X. Yang, D. Liu, Y. Ji, F. Zhang, D. Chen, Y. Cui. Mater. Sci. Semicond. Process., 83, 58 (2018). DOI: 10.1016/j.mssp.2018.04.019
- T.M. Donovan, W.E. Spicer, J.M. Bennett, E.J. Ashley. Phys. Rev. B, 2, 397 (1970). DOI: 10.1103/PhysRevB.2.397
- A.L. Stepanov, A.M. Rogov. Opt. Commun., 474, 126052 (2020). DOI: 10.1016/j.optcom.2020.126052Get
- K.L. Bhatia, P. Singh, M. Singh, N. Kishore, N.C. Mehra, D. Kanjilal. Nucl. Instrum. Methods Phys. Res. B, 94, 379 (1994). DOI: 10.1016/0168-583X(94)95412-7
- Q.-C. Zhang, J.C. Kelly, M.J. Kenny. Nucl. Instrum. Methods Phys. Res. B, 47, 257 (1990). DOI: 10.1016/0168-583X(90)90755-J
- S. Schicho, A. Jaouad, C. Sellmer, D. Morris, V. Aimez, R. Ar\`es. Mater. Lett., 94, 86 (2013). DOI: 10.1016/j.matlet.2012.12.014
- A.V. Pavlikov, A.M. Rogov, A.M. Sharafutdinova, A.L. Stepanov. Vacuum, 184, 109881 (2021). DOI: 10.1016/j.vacuum.2020.109881
- S.A. Gavrilov, A.A. Dronov, I.M. Gavrilin, R.L. Volkov, N.I. Borgardt, A.Y. Trifonov, A.V. Pavlikov, P.A. Forsh, P.K. Kashkarov. J. Raman Spectrosc., 49, 810 (2018). DOI: 10.1002/jrs.5353
- K. Boren, D. Huffman. Pogloscheniye i rasseyaniye sveta malymi chastitsami (Mir, M., 1986) (in Russian)
- A. Dimoulas, P. Tsipas, A. Sotiropoulos. Appl. Phys. Lett., 89, 252110 (2006). DOI: 10.1063/1.2410241
- E. Akkari, O. Touayar. Int. J. Nanotechnology, 10, 553 (2013). DOI: 10.1504/IJNT.2013.053524
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.