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Microwave Schottky diodes based on single GaN nanowires
Shugurov K.Yu.
1, Mozharov A.M.2, Sapunov G.A.1, Fedorov V.V.1, Moiseev E.I.3, Blokhin S.A.4, Kuzmenkov A.G.4, Mukhin I.S.1,5
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3HSE University, St. Petersburg, Russia
4Ioffe Institute, St. Petersburg, Russia
5Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
3HSE University, St. Petersburg, Russia
4Ioffe Institute, St. Petersburg, Russia
5Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: shugurov17@mail.ru
A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S21) of diode structures at various bias voltages, the parameters of the corresponding equivalent electrical circuit were determined. It is shown that the cutoff frequency of the fabricated diodes reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, Schottky diode.
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