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Study of the influence of the energy of argon ions on the surface roughness of the main sections of single-crystal silicon

Russian version

DOI: 10.21883/TP.2022.08.54569.70-22

M.S. Mikhailenko¹, A.E. Pestov ¹, A.K. Chernyshev ¹, M.V. Zorina ¹, N.I. Chkhalo ¹, N.N. Salaschenko ¹

¹Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Email: mikhaylenko@ipmras.ru

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Abstract
References
Статистика просмотров

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9·10^-2-6.3·10¹ μm^-1 less than 0.3 nm for the main cuts monocrystalline silicon <100>, <110> and <111>. Keywords: sputtering yield, roughness, single-crystalline, monocrystalline, accelerated ions.

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