Technical Physics

To authors

Volumes and Issues

2024
- 1 2 3 4 5 6 7 8
2023
- 1 2 3 4 5 6 7 8 9 10 11 12
2022
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Study of the influence of the energy of argon ions on the surface roughness of the main sections of single-crystal silicon

Russian version

DOI: 10.21883/TP.2022.08.54569.70-22

M.S. Mikhailenko¹, A.E. Pestov ¹, A.K. Chernyshev ¹, M.V. Zorina ¹, N.I. Chkhalo ¹, N.N. Salaschenko ¹

¹Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Email: mikhaylenko@ipmras.ru

PDF

Abstract
References
Статистика просмотров

The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200-1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9·10^-2-6.3·10¹ μm^-1 less than 0.3 nm for the main cuts monocrystalline silicon <100>, <110> and <111>. Keywords: sputtering yield, roughness, single-crystalline, monocrystalline, accelerated ions.

L. Samoylova, H. Sinn, F. Siewert, H. Mimura, K. Yamauchi, T. Tschentscher. Proc. SPIE, 7360, 73600E (2009). DOI: 10.1117/12.822251
R.A. Paquin, M.R. Howells. Proc. SPIE, 3152 (1997). DOI: 10.1117/12.295549
H. Xiao, Y. Dai, J. Duan, Y. Tian, J. Li. Appl. Surf. Sci., 544, 148954 (2021). DOI: 10.1016/j.apsusc.2021.148954
T. Arnold, G. Bohm, R. Fechner, J. Meister, A. Nickel, F. Frost, T. Hansel, A. Schindler. Nucl. Instrum. Meth. Phys. B, 616 (2-3), 147-156 (2010). DOI: 10.1016/j.nima.2009.11.013
M. Ghigo, S. Basso, M. Civitani, R. Gilli, G. Pareschi, B. Salmaso, G. Vecchi, W.W. Zhang. Proc. SPIE, 10706, 107063I (2018). DOI: 10.1117/12.2313939
N.I. Chkhalo, I.A. Kaskov, I.V. Malyshev, M.S. Mikhaylenko, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, M.N. Toropov, I.G. Zabrodin. Precis Eng., 48, 338--346 (2017). DOI: 10.1016/j.precisioneng.2017.01.004
X. Li, D. Wang, F. Nie, P. Wu, S. Zhao. Proc. SPIE, 12073, 120730L (2021). DOI: 10.1117/12.2605262
E. Vassallo, M. Pedroni, S.M. Pietralunga, R. Caniello, A. Cremona, F. Di Fonzo, F. Ghezzi, F. Inzoli, G. Monteleone, G. Nava, V. Spampinato, A. Tagliaferri, M. Zani, G. Angella. Thin Solid Films, 603, 173-179 (2016). DOI: 10.1016/j.tsf.2016.02.008
Z. Fang, Y. Zhang, R. Li, Y. Liang, H. Deng. Int. J. Mach. Tools Manuf., 159, 103649 (2020). DOI: 10.1016/j.ijmachtools.2020.103649
W. Liao, Y. Dai, X. Xie, L. Zhou. Appl. Opt., 53 (19), 4266 (2014). DOI: 10.1364/AO.53.004266
W. Liao, Y. Dai, X. Xie, L. Zhou. Appl. Opt., 53 (19), 4275 (2014). DOI: AO.53.004275
Telecom STV. Silicon Wavers. [Electronic resource] Available at: http://www.telstv.ru/?page=en_silicon_wafers , free
N.I. Chkhalo, N.N. Salashchenko, M.V. Zorina. Rev. Sci. Instrum., 86, 016102 (2015). DOI: 10.1063/1.4905336
M.S. Mikhailenko, N.I. Chkhalo, A.V. Mil'kov, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, I.L. Strulya, M.V. Zorina, S.Yu. Zuev. Surf. Coat. Technol., 311, 351-356 (2017). DOI: 10.1016/j.surfcoat.2017.01.023

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Institute Officers:

Contact us: