Volumes and Issues
Home » Technical Physics » Year 2022, issue 8 » Article p. 933
<<<>>>
Technique for investigation of the shape changes of wafers and thin-film membranes by using geomorphometric approaches
Russian version
DOI: 10.21883/TP.2022.08.54553.101-22
Dedkova A. A. 1,2, Florinsky I. V. 2, Djuzhev N. A. 1
1National Research University of Electronic Technology, Zelenograd, Moscow, Russia
2Institute of Mathematical Problems of Biology, Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Pushchino, Russia
Email: dedkova@ckp-miet.ru, iflor@mail.ru
PDF
We discuss a technique for investigating changes in complex topography and shape of structures using geomorphometric methods to study surfaces of wafers and membranes formed by the Bosch process. The wafers were analyzed before and after the deposition of the SiO2 layer. The membranes were analyzed during the bulge testing. The study was carried out using maps of the catchment area and principal curvatures taking into account artifacts of the approximation of experimental data. We found a correspondence between the distribution of lines connecting the highest surface areas before and after the deposition of the SiO2 layer on the wafers. For membranes with structure: Al(0.8 μm)/SiO2(0.6 μm)/Al(1.1 μm), pSi*(0.8 μm)/SiNx(0.13 μm)/SiO2, Al(0.6 μm) we also found that features of membrane boundaries are mainly caused by their initial shape rather than change under the action of an applied pressure. The advantages of geomorphometric methods for studying changes in the shape of wafers and thin-film membranes in technological processes for the manufacturing of microelectronic devices are shown in comparison with traditional methods for analyzing surface topography maps. Keywords: thin films, membrane, defect, mechanical characteristics, mechanical stresses, deformation, deflection, strain, microelectromechanical systems, MEMS, circular membrane, silicon substrate, optical profilometry, overpressure, geomorphometry, Gaussian curvature, warpage, principal curvatures, wafer, bulge testing, bulging method, thin-layer coating, digital elevation models, DEM, surface, topography.
  1. I.V. Florinsky Digital Terrain Analysis in Soil Science and Geology. 2nd ed. (Elsevier/Academic Press, Amsterdam, 2016)
  2. P.A. Shary. Mathematical Geology, 27 (3), 373 (1995). DOI: 10.1007/BF02084608
  3. H. Liu, Z Dong, R. Kang, P. Zhou, S. Gao. Metrol. Meas. Syst, XXII (4), 531 (2015). DOI: 10.1515/mms-2015-0052
  4. G.T. Ostrowicki, S.P. Gurum, A. Nangia. IEEE 68th Electron. Components and Technol. Conf., 2110 (2018). DOI: 10.1109/ECTC.2018.00317
  5. X. Zhu, X. Chen, H. Liu, R. Kang, B. Zhang, Z. Dong. Mater. Res. Express, 4, 065904 (2017). DOI: 10.1088/2053-1591/aa71ed
  6. Y. Kim, S.-K. Kang, S.-D. Kim, S.E. Kim. Microelectron. Engineer., 89, 46 (2012). DOI: 10.1016/j.mee.2011.01.079
  7. D. Shi, Z. Xia, M. Hu, G. Mei, Z. Huo. Semicond. Sci. Technol., 35 (4), 045031 (2020). DOI: 10.1088/1361-6641/ab73eb
  8. G. Gadhiya, B. Bramer, S. Rzepka, T. Otto. 22nd Europ. Microelectron. Packaging Conf. \& Exhibition (EMPC), 19265124 (2019). DOI: 10.23919/EMPC44848.2019.8951805
  9. C. Ferrandon, B. KhoIti, L. Castagne, F. Casset, R. Franiatte, D. Mermin, G. Simon, G. Imbert, S. Petitdidier, F. Bailly, P. Chevalier, L. Toffanin, N. Chevrier, J.P. Pierrel. 6th Electron. System-Integration Technol. Conf. (ESTC), 16520083 (2016). DOI: 10.1109/ESTC.2016.7764485
  10. V.V. Gribko, A.S. Markelov, V.N. Trushin, E.V. Chuprunov. J. Surf. Investigation: X-Ray, Synchrotron and Neutron Techniques, 11 (3), 505 (2017). DOI: 10.1134/S1027451017030077
  11. V.V. Gribko, A.S. Markelov, V.N. Trushin, E.V. Chuprunov. Instruments and Experimental Techniques, 61 (1), 148 (2018). DOI: 10.1134/S0020441218010165
  12. V.V. Gribko, A.S. Markelov, V.N. Trushin, E.V. Chuprunov. Instruments and Experimental Techniques, 62 (5), 703 (2019). DOI: 10.1134/S0020441219040183
  13. E.B. Klyuenkov, V.N. Polkovnikov, N.N. Salashchenko, N.I. Chkhalo. Bull. Russ. Academy of Sciences: Physics, 72 (2), 188 (2008)
  14. N.N. Salashchenko, M.N. Toporov, N.I. Chkhalo. Bull. Russ. Academy of Sciences: Physics, 74 (1), 53 (2010). DOI: 10.3103/S1062873810010144
  15. A.A. Akhsakhalyan, A.D. Akhsakhalyan, S.A. Garakhin, N.N. Salashchenko, M.N. Toropov, N.I. Chkhalo, N.F. Erkhova, A.S. Kirichenko, S.V. Kuzin. Tech. Phys., 64 (11), 1680 (2019). DOI: 10.1134/S1063784219110033
  16. A.A. Akhsakhalyan, A.D. Akhsakhalyan, D.G. Volgunov, M.V. Zorina, M.N. Toropov, N.I. Chkhalo. Poverkhnost'. Rentgenovskie, sinkhrotronnye i nejtronnye issledovaniya, 7, 93 (2015) (in Russian). DOI: 10.7868/S0207352815070033
  17. A.K. Chernyshev, I.V. Malyshev, A.E. Pestov, N.I. Chkhalo. Tech. Phys., 64 (11), 1560 (2019). DOI: 10.1134/S1063784219110069
  18. M.V. Zorina, I.M. Nefedov, A.E. Pestov, N.N. Salashchenko, S.A. Churin, N.I. Chkhalo. J. Surfa. Investigation: X-Ray, Synchrotron and Neutron Techniques, 9 (4), 765 (2015). DOI: 10.1134/S1027451015040394
  19. S.P. Radzevich. Formoobrazovaniye poverkhnostei detalei (Osnovy teorii) (Rastan, Kiev, 2001). (in Russian)
  20. S.Kh. Nguyen. Novaya Nauka: Sovremennoye sostoyanie i puti razvitiya, 12 (4), 99 (2016). (in Russian)
  21. B.B. Ponomarev, S.Kh. Nguyen. Vestnik Irkutskogo Gos. Tekh Un-ta, 22 (4), 62 (2018). (in Russian). DOI: 10.21285/1814-3520-2018-4-62-72
  22. X.L. Le, K. Kim, S.H. Choa. Intern. J. Precision Engineer. Manufactur., 23, 347 (2022). DOI: 10.1007/s12541-021-00602-1
  23. V.S. Balderrama, J.A. Leon-Gil, D.A. Fernandez-Benavides, J. Ponce-Hernandez, M. Bandala-Sanchez. IEEE Sensors J., 22 (3), 1939 (2022). DOI: 10.1109/JSEN.2021.3135543
  24. R. Sharma, I. Yadav, A. Meena, M. Kumar, R. Saxena, K.K. Jain. Phys. Semicond. Dev., 215, 855 (2019)
  25. C. Pollock, J. Morrison, M. Imboden, T.D.C. Little, D.J. Bishop. Opt. Express, 25 (17), 20274 (2017). DOI: 10.1364/OE.25.020274
  26. A.V. Krysko, J. Awrejcewicz, I.V. Papkova, V.A. Krysko. Materials, 13, 3187 (2020). DOI: 10.3390/ma13143187
  27. A.A. Dedkova, I.V. Florinsky, N.A. Djuzhev. Proceed. SPIE --- The Intern. Society for Opt. Engineer., 12157, 121571K (2022). DOI: 10.1117/12.2623908
  28. A.A. Dedkova, I.V. Florinsky, E.E. Gusev, N.A. Dyuzhev, M.Yu. Fomichev, M.Yu. Shtern. Russ. J. Nondestructive Testing, 57 (11), 1000 (2021). DOI: 10.1134/S1061830921110073
  29. A.A. Dedkova, I.V. Florinsky, N.A. Djuzhev. Phys. Usp., 65(7), 706 (2022). DOI: 10.3367/UFNe.2021.10.039076
  30. P.A. Shary, L.S. Sharaya, A.V. Mitusov. Geoderma, 107 (1/2), 1 (2002). DOI: 10.1016/S0016-7061(01)00136-7
  31. I.V. Florinsky, A.N. Pankratov. Intern. J. Geograph. Inform. Sci., 30 (12), 2506 (2016). DOI: 10.1080/13658816.2016.1188932
  32. A.A. Dedkova, P.Yu. Glagolev, E.E. Gusev, N.A. Dyuzhev, V.Yu. Kireev, S.A. Lychev, D.A. Tovarnov. ZhTF, 91 (10), 1454 (2021). (in Russian). DOI: 10.21883/JTF.2021.10.51357.121-21
  33. N.A. Djuzhev, E.E. Gusev, A.A. Dedkova, D.A. Tovarnov, M.A. Makhiboroda. Tech. Phys., 65 (11), 1755 (2020). DOI: 10.1134/S1063784220110055
  34. A.A. Dedkova, N.A. Dyuzhev, E.E. Gusev, M.Yu. Shtern. Russ. J. Nondestructive Testing, 56 (5), 452 (2020). DOI: 10.1134/S1061830920050046
  35. F. Zhao. Proceedings Modeling, Signal Processing, and Control for Smart Structures, 6926, 69260W (2008). DOI: 10.1117/12.775511
  36. R.H. Plaut. Acta Mech., 202, 79 (2009). DOI: 10.1007/s00707-008-0037-3
  37. J. Neggers, J.P.M. Hoenagels, F. Hild, S. Roux, M.G.D. Geers. Experimental Mechan., 54 (5), 717 (2014). DOI: 10.1007/S11340-013-9832-4
  38. L.E. Andreeva. Uprugie elementy priborov (Mashgiz, M., 1962) (in Russian)
  39. S.P. Timoshenko, S. Voynovsky-Kriger. Plastiny i obolochki (Nauka, M., 1966) (in Russian)
  40. G.G. Stoney. Proceed. Royal Society of London. Series A, 82 (553), 172 (1909). DOI: 10.1098/RSPA.1909.0021
  41. N.V. Filimonenkova, K.A. Danilova, P.N. Mironova. Aktualnye napravleniya nauchnykh issledovanii XXI veka: teoriya i praktika, 2 (4-1), 353 (2014). (in Russian). DOI: 10.12737/4778

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru