Technical Physics Letters

To authors

Volumes and Issues

2024
- 1 2 3 4 5 6 7 8
2023
- 1 2 3 4 5 6 7 8 9 10 11 12
2022
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Influence of the conditions for the formation of In₂O₃-SnO₂ films by magnetron sputtering on the charge carriers lifetime in silicon

Russian version

DOI: 10.21883/TPL.2022.15.54271.18945

Kudryashov D. A.¹, Gudovskikh A. S.^1,2, Maksimova A. A.², Baranov A. I.¹, Uvarov A. V.¹, Morozov I. A.¹, Monastyrenko A. O.¹

¹Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
²St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia

Email: kudryashovda@spbau.ru

PDF

Abstract
References
Статистика просмотров

The critical influence of the indium-tin oxide films formation rate on the degradation degree of the a-Si : H/c-Si interface during magnetron sputtering is shown. It was found that when the distance between the magnetron and the sample is 10 cm, the lifetime decreases from ~ 2 ms to 10 μs, while when this distance is reduced to 7 cm, due to a two-times decrease in the deposition time, a decrease is observed from 1.5 ms to 450 μs. Keywords: silicon, plasma-enhance deposition, thin films, passivation, ITO, solar cells.

K. Yoshikawa, H. Kawasaki, W. Yoshida, T. Irie, K. Konishi, K. Nakano, T. Uto, D. Adachi, M. Kanematsu, H. Uzu, K. Yamamoto, Nature Energy, 2, 17032 (2017). DOI: 10.1038/nenergy.2017.32
S. Jafari, J. Steffens, M. Wendt, B. Terheiden, S. Meyer, D. Lausch, Phys. Status Solidi B, 257, 2000097 (2020). DOI: 10.1002/pssb.202000097
K. Ellmer, T. Welzel, J. Mater. Res., 27, 765 (2012). DOI: 10.1557/jmr.2011.428
A. Morales-Vilches, C. Voz, M. Colina, G. Lopez, I. Marti n, P. Ortega, A. Orpella, R. Alcubilla, Energy Procedia, 44, 3 (2014). DOI: 10.1016/j.egypro.2013.12.002
B. Demaurex, S. De Wolf, A. Descoeudres, Z.-Ch. Holman, C. Ballif, Appl. Phys. Lett., 101, 171604 (2012). DOI: 10.1063/1.4764529
B.-M. Meiners, D. Borchert, S. Hohage, S. Holinksi, P. Schafer, Phys. Status Solidi A, 212, 1817 (2015). DOI: 10.1002/pssa.201431923
D. Kudryashov, A. Gudovskikh, A. Baranov, I. Morozov, A. Monastyrenko, Phys. Status Solidi A, 217, 1900534 (2020). DOI: 10.1002/pssa.201900534
D.A. Kudriashov, A.A. Maksimova, E.A. Vyacheslavova, A.V. Uvarov, I.A. Morozov, A.I. Baranov, A.O. Monastyrenko, A.S. Gudovskikh, Semiconductors, 55 (4), 475 (2021). DOI: 10.1134/S1063782621040072
D. Kudryashov, A. Gudovskikh, K. Zelentsov, J. Phys.: Conf. Ser., 461, 012021 (2013). DOI: 10.1088/1742-6596/461/1/012021

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Institute Officers:

Contact us: