Influence of the conditions for the formation of In2O3-SnO2 films by magnetron sputtering on the charge carriers lifetime in silicon
Kudryashov D. A.1, Gudovskikh A. S.1,2, Maksimova A. A.2, Baranov A. I.1, Uvarov A. V.1, Morozov I. A.1, Monastyrenko A. O.1
1Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: kudryashovda@spbau.ru

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The critical influence of the indium-tin oxide films formation rate on the degradation degree of the a-Si : H/c-Si interface during magnetron sputtering is shown. It was found that when the distance between the magnetron and the sample is 10 cm, the lifetime decreases from ~ 2 ms to 10 μs, while when this distance is reduced to 7 cm, due to a two-times decrease in the deposition time, a decrease is observed from 1.5 ms to 450 μs. Keywords: silicon, plasma-enhance deposition, thin films, passivation, ITO, solar cells.
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