Analysis of internal optical loss of 1.3 μm vertical-cavity surface-emitting laser based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs tunnel junction
Blokhin S.A. 1, Bobrov M. A. 1, Blokhin A.A. 1, Maleev N.A. 1, Kuzmenkov A.G. 2, Vasyl’ev A. P. 2, Rochas S. S. 3, Babichev A. V. 3, Novikov I. I. 3, Karachinsky L. Ya. 3, Gladyshev A. G. 4, Denisov D. V. 5, Voropaev K. O. 6, Egorov А. Yu. 4, Ustinov V. M. 2
1Ioffe Institute, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
3ITMO University, St. Petersburg, Russia
4Connector Optics LLC, St. Petersburg, Russia
5St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
6OAO OKB-Planeta, Veliky Novgorod, Russia
Email: blokh@mail.ioffe.ru, bobrov.mikh@gmail.com, bloalex91@yandex.ru, Maleev@beam.ioffe.ru, kuzmenkov@mail.ioffe.ru, vasiljev@mail.ioffe.ru, stanislav_rochas@itmo.ru, a.babichev@mail.ioffe.ru, Innokenty.Novikov@connector-optics.com, leonid.karachinsky@connector-optics.com, andrey.gladyshev@connector-optics.com, dmitry.denisov@connector-optics.com, voropaevko@okbplaneta.ru, anton@beam.ioffe.ru, vmust@beam.ioffe.ru

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The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20oC and 90oC, respectively. Keywords: vertical-cavity surface-emitting laser, wafer fusion, tunnel junction, superlattice, internal optical loss.
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