Gas sensitivity of nanostructured coatings based on zinc oxide nanorods under combined activation
Ryabko A.A.
1,2, Bobkov А.А.
1, Nalimova S.S.
1, Maksimov A.I.
1, Levitskii V.S.
2, Moshnikov V.A.
1, Terukov E.I.
1,21St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: a.a.ryabko93@yandex.ru
This paper presents a study of the gas sensitivity of a nanostructured zinc oxide coating to isopropyl alcohol vapor during heating, ultraviolet irradiation, as well as simultaneous heating and irradiation. Simultaneous heating to 150oC and ultraviolet irradiation ensures an increase in the sensor layer response. A 10-fold decrease in the power consumption of an ultraviolet light-emitting diode results in a 1.2-fold decrease in the response of the sensor coating. Reducing the operating temperature of a gas sensor with low power consumption and achieving the required sensitivity can provide adsorption sensors integration into portable devices for monitoring ambient air quality. Keywords: zinc oxide, nanorods, gas sensor, UV irradiation, combined activation.
- E.A. Forsh, E.A. Guseva. Semiconductors, 54 (2), 217 (2020). DOI: 10.1134/S1063782620020098
- S. Mahajan, S. Jagtap. Appl. Mater. Today, 18, 100483 (2020). DOI: 10.1016/j.apmt.2019.100483
- V.M. Kondratev, A.D. Bolshakov, S.S. Nalimova. Proceed. 2021 IEEE Conf. Russ. Young Researchers in Electrical and Electronic Engineering (ElConRus), 1163 (2021). DOI: 10.1109/ElConRus51938.2021.9396573
- D. Burman, R. Ghosh, S. Santra, S.K. Ray, P. Kumar Guha. Nanotechnology, 28, 435502 (2017). DOI: 10.1088/1361-6528/aa87cd
- N.H. Hanh, L.V. Duy, C.M. Hung, N.V. Duy, Y.-W. Heo, N.V. Hieu, N.D. Hoa. Sensors and Actuators A, 302, 111834 (2020). DOI: 10.1016/j.sna.2020.111834
- G. Katwal, M. Paulose, I.A. Rusakova, J.E. Martinez, O.K. Varghese. Nano Lett., 16, 3014 (2016). DOI: 10.1021/acs.nanolett.5b05280
- S.J. Kim, S.J. Choi, J.S. Jang, N.H. Kim, M. Hakim, H.L. Tuller, I.D. Kim. ACS Nano, 10, 5891 (2016). DOI: 10.1021/acsnano.6b01196
- S.S. Karpova, V.A. Moshnikov, S.V. Mjakin, E.S. Kolovangina. Semiconductors, 47 (3), 392 (2013). DOI: 10.1134/S1063782613030123
- S.S. Karpova, V.A. Moshnikov, A.I. Maksimov, S.V. Mjakin, N.E. Kazantseva. Semiconductors, 47 (8), 1026 (2013). DOI: 10.1134/S1063782613080095
- V.A. Moshnikov, S.S. Nalimova, B.I. Seleznev. Semiconductors, 48 (11), 1499 (2014). DOI: 10.1134/S1063782614110177
- D. Degler, U. Weimar, N. Barsan. ACS Sens., 4 (9), 2228 (2019). DOI: 10.1021/acssensors.9b00975
- A. Mirzaei, J.-H. Lee, S.M. Majhi, M. Weber, M. Bechelany, H.W. Kim, S.S. Kim. J. Appl. Phys., 126, 241102 (2019). DOI: 10.1063/1.5118805
- Kh.A. Abdullin, S.K. Zhumagulov, G.A. Ismailova, Zh.K. Kalkozova, V.V. Kudryashov, A.S. Serikkanov. Tech. Phys., 65 (7), 1139 (2020). DOI: 10.1134/S1063784220070026
- C.P. Goyal, D. Goyal, N.S. Ramgir, M. Navaneethan, Y. Hayakawa, C. Muthamizhchelvan, H. Ikeda, S. Ponnusamy. Phys. Solid State, 63, 460 (2021). DOI: 10.1134/S1063783421030070
- R.L. Fomekong, H.M. Tedjieukeng Kamta, J. Ngolui Lambi, D. Lahem, P. Eloy, M. Debliquy, A. Delcorte. J. Alloys Compounds, 731, 1188 (2018). DOI: 10.1016/j.jallcom.2017.10.089
- X. Wang, T. Wang, G. Si, Y. Li, S. Zhang, X. Deng, X. Xu. Sens. Act. B, 302, 127165 (2020). DOI: 10.1016/j.snb.2019.127165
- M.A. Haija, A.F.S. Abu-Hani, N. Hamdan, S. Stephen, A.I. Ayesh. J. Alloys Compounds, 690, 461 (2017). DOI: 10.1016/j.jallcom.2016.08.174
- I.A. Pronin, N.D. Yakushova, I.A. Averin, A.A. Karmanov, A.S. Komolov, M.M. Sychev, V.A. Moshnikov, E.I. Terukov. Inorg. Mater., 57 (11), 1140 (2021). DOI: 10.1134/S0020168521110108
- I.A. Pronin, N.D. Yakushova, M.M. Sychev, A.S. Komolov, S.V. Myakin, A.A. Karmanov, I.A. Averin, V.A. Moshnikov. Glass Phys. Chem., 44 (5), 464 (2018). DOI: 10.1134/S1087659618050140
- A. Bobkov, V. Moshnikov, A. Varezhnikov, I. Plugin, F.S. Fedorov, V. Goffman, V. Sysoev, V. Trouillet, U. Geckle, M. Sommer. Sensors, 19 (19), 4265 (2019). DOI: 10.3390/s19194265
- T.V. Peshkova, D.Ts. Dimitrov, S.S. Nalimova, I.E. Kononova, N.K. Nikolaev, K.I. Papazova, A.S. Bozhinova, V.A. Moshnikov, E.I. Terukov. Tech. Phys., 59 (5), 771 (2014). DOI: 10.1134/S1063784214050259
- G. Korotcenkov. Nanomaterials, 11, 1555 (2021). DOI: 10.3390/nano11061555
- K.-R. Park, H.-B. Cho, J. Lee, Y. Song, W.-B. Kim, Y.-H. Cho. Sensors and Actuators B: Chemical, 302, 127179 (2020). DOI: 10.1016/j.snb.2019.127179
- S.S. Shendage, V.L. Patil, S.A. Vanalakar, S.P. Patil, N.S. Harale, J.L. Bhosale, J.H. Kim, P.S. Patil. Sensors and Actuators B, 240, 426 (2017). DOI: 10.1016/j.snb.2016.08.177
- S. Agarwal, S. Kumar, H. Agrawal, M.G. Moinuddin, M. Kumar, S.K. Sharma, K. Awasthi. Sensors and Actuators: B. Chemical, 346, 130510 (2021). DOI: 10.1016/j.snb.2021.130510
- G.J. Choi, R.K. Mishra, J.S. Gwag. Mater. Lett., 264, 127385 (2020). DOI: 10.1016/j.matlet.2020.127385
- M.A. Anikina, A.A. Ryabko, S.S. Nalimova, A.I. Maximov. J. Phys.: Conf, Series, 012010 (2021). DOI: 10.1088/1742-6596/1851/1/012010
- A.S. Bozhinova, N.V. Kaneva, I.E. Kononova, S.S. Nalimova, Sh.A. Syuleiman, K.I. Papazova, D.Ts. Dimitrov, V.A. Moshnikov, E.I. Terukov. Semiconductors, 47 (12), 1636 (2013). DOI: 10.1134/S106378261312004X
- S.S. Nalimova, V.A. Moshnikov, S.V. Myakin. Glass Phys. Chem., 42 (6), 597 (2016). DOI: 10.1134/S1087659616060171
- S.S. Nalimova, I.E. Kononova, V.A. Moshnikov, D.Ts. Dimitrov, N.V. Kaneva, L.K. Krasteva, S.A. Syuleyman, A.S. Bojinova, K.I. Papazova, A.Ts. Georgieva. Bulgar. Chem. Commun., 49, 121 (2017)
- G. Li, Z. Sun, D. Zhang, Q. Xu, L. Meng, Y. Qin. ACS Sens, 4, 1577 (2019). DOI: 10.1021/acssensors.9b00259
- A.A. Ryabko, S.S. Nalimova, A.I. Maximov, V.A. Moshnikov. Proceed. IEEE Conf. Russ. Young Researchers in Electrical and Electronic Engineering (ElConRus), 1180 (2021). DOI: 10.1109/ElConRus51938.2021.9396166
- A.S. Chizhov, M.N. Rumyantseva, K.A. Drozdov, I.V. Krylov, M. Batuk, J. Hadermann, D.G. Filatova, N.O. Khmelevsky, V.F. Kozlovsky, L.N. Maltseva, A.M. Gaskov. Sensors and Actuators: B. Chemical, 329, 129035 (2021). DOI: 10.1016/j.snb.2020.129035
- J. Wang, S. Fan, Y. Xia, C. Yang, S. Komarneni. J. Hazardous Mater., 381, 120919 (2020). DOI: 10.1016/j.jhazmat.2019.120919
- S.S. Nalimova, A.I. Maximov, V.A. Moshnikov, A.A. Bobkov, D.S. Mazing, A.A. Ryabko, E.A. Levkevich, A.A. Semenova. IEEE Intern. Conf. Electrical Engineering and Photonics (EExPolytech): Proceed., 223 (2019). DOI: 10.1109/EExPolytech.2019.8906789
- J. Yang, W. Han, J. Ma, C. Wang, K. Shimanoe, S. Zhang, Y. Sun, P. Cheng, Y. Wang, H. Zhang, G. Lu. Sensors and Actuators: B. Chemical, 340, 129971 (2021). DOI: 10.1016/j.snb.2021.129971
- S.S. Nalimova, A.A. Ryabko, A.I. Maximov, V.A. Moshnikov. J. Phys.: Conf. Series, 012128 (2020). DOI: 10.1088/1742-6596/1697/1/012128
- A.A. Ryabko, A.I. Maximov, V.N. Verbitskii, V.S. Levitskii, V.A. Moshnikov, E.I. Terukov. Semiconductors, 54 (11), 1496 (2020). DOI: 10.1134/S1063782620110238
- R. Cusco, E. Alarcon-Llado, J. Ibanez, L. Artus, J. Jimenez, B. Wang, M.J. Callahan. Phys. Rev. B, 75 (16), 165202(2007). DOI: 10.1103/PhysRevB.75.165202
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.