Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate
Bessolov V.N. 1, Konenkova E.V.1, Orlova T.A.1, Rodin S.N.1, Solomnikova A.V.2
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg Electrotechnical University LETI, St. Petersburg, Russia
Email: lena@triat.ioffe.ru

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It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-patterned Si(100) or Si(113) substrates with a V-shaped or U-shaped surface profile, respectively. The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-patterned substrate. Keywords: surface morphology, semipolar gallium nitride, nano-patterned silicon substrate.
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