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Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate
It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-patterned Si(100) or Si(113) substrates with a V-shaped or U-shaped surface profile, respectively. The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-patterned substrate. Keywords: surface morphology, semipolar gallium nitride, nano-patterned silicon substrate.
- P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K.H. Ploog. Nature, 406, 865 (2000). DOI: 10.1038/35022529
- A. Hirai, Z. Jia, M. Schmidt, R. Farrell, S. DenBaars, S. Nakamura, J. Speck, K. Fujito. Appl. Phys. Lett., 91, 191906 (2007). DOI: 10.1063/1.2802570
- Y. Honda, N. Kameshiro, M. Yamaguchi, N. Sawaki. J. Cryst. Growth, 242, 82 (2002). DOI: 10.1016/S0022-0248(02)01353-2
- J. Song, J. Choi, K. Xiong, Y. Xie, J.J. Cha, J. Han. ACS Appl. Mater. Interfaces, 9 (16), 14088 (2017). DOI: 10.1021/acsami.7b01336
- J. Haggar, Y. Cai, S.S. Ghataora, R.M. Smith, J. Bai, T. Wang. ACS Appl. Electron. Mater., 2, 2363 (2020). DOI: 10.1021/acsaelm.0c00399
- S. Guha, N.A. Bojarczuk. Appl. Phys. Lett., 73, 1487 (1998). DOI: 10.1063/1.122181
- Y. Zhao, S.-H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J.S. Speck, S.P. DenBaars, S. Nakamura. Appl. Phys. Express, 6, 062102 (2013). DOI: 10.7567/APEX.6.062102
- Y. Zhao, Q. Yan, C.-Y. Huang, S.-C. Huang, P.S. Hsu, S. Tanaka, C.-C. Pan, Y. Kawaguchi, K. Fujito, C.G. Van de Walle, J.S. Speck, S.P. DenBaars, S. Nakamura, D. Feezell. Appl. Phys. Lett., 100, 201108 (2012). DOI: 10.1063/1.4719100
- V. Bessolov, A. Zubkova, E. Konenkova, S. Konenkov, S. Kukushkin, T. Orlova, S. Rodin, V. Rubets, D. Kibalov, V. Smirnov. Phys. Stat. Sol. B, 256, 1800268 (2019). DOI: 10.1002/PSSB.201800268
- V.N. Bessolov, E.V. Konenkova, S.N. Rodin, D.S. Kibalov, V.K. Smirnov. Semiconductors, 55 (4), 471 (2021). DOI: 10.1134/S1063782621040035
- H. Li, H. Zhang, J. Song, P. Li, Sh. Nakamura, S.P. DenBaars. Appl. Phys. Rev., 7, 041318 (2020). DOI: 10.1063/5.0024236
- V.K. Smirnov, D.S. Kibalov, O.M. Orlov, V.V. Graboshnikov. Nanotechnology, 14, 709 (2003). DOI: 10.1088/0957-4484/14/7/304
- P. Hartman, W.G. Perdok. Acta Cryst., 8 (9), 521 (1955). DOI: 10.1107/S0365110X55001679
- B.-O. Jung, S.-Y. Bae, Y. Kato, M. Imura, D.-S. Lee, Y. Honda, H. Amano. Cryst. Eng. Comm., 16, 2273 (2014). DOI: 10.1039/C3CE42266F
- M. Nami, R. Eller, S. Okur, A. Rishinaramangalam, S. Liu, I. Brener, D. Feezell. Nanotechnology, 28, 025202 (2017). DOI: 10.1088/0957-4484/28/2/025202
- C. Bayram, J.A. Ott, K.-T. Shiu, Ch.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, D.K. Sadana. Adv. Funct. Mater., 24 (28), 4492 (2014). DOI: 10.1002/adfm.201304062
- T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki. Phys. Stat. Sol. C, 0 (7), 2154 (2003). DOI: 10.1002/pssc.200303511
- M. Stepniak, M. Wosko, J. Prazmowska-Czajka, A. Stafiniak, D. Przybylski, R. Paszkiewicz. Electronics, 9, 2129 (2020). DOI: 10.3390/electronics9122129
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Дата начала обработки статистических данных - 27 января 2016 г.