Role of the shadowing effect in the growth kinetics of III-V nanowires by molecular beam epitaxy
Dubrovskii V. G.1, Rylkova M. V.1, Sokolovskii A. S.1, Sokolova Zh. V.1,2, Mikushev S. V.1
1St. Petersburg State University, St. Petersburg, Russia
2Saint Petersburg State University of Economics, St. Petersburg, Russia
Email: dubrovskii@mail.ioffe.ru

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A model for III-V nanowire (NW) growth in molecular beam epitaxy (MBE) is developed, which describes the NW growth by surface diffusion of adatoms influenced by the shadowing effect. It is shown that the shadowing effect strongly influences the growth kinetics in dense ensembles of NWs. A new solution for the NW length as a function of its radius and deposition thickness is obtained. A comparison is given for theoretical and experimental lengths of InP NWs grown on either adsorbing or reflecting substrates. Keywords: nanowires, adatom diffusion, shadowing effect.
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