Technical Physics Letters
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- 2023
- 2022
Influence of preliminary ion bombardment on the formation of Co and CoSi2 nanofilms on Si surface during solid-phase deposition
In this work, to obtain ordered nanophases of Co and CoSi2, nuclei are preliminarily created on the Si surface by bombardment with Ar+ ions with E0=0.5 keV and D=8· 1013 cm-2. It was found that a narrow band gap (Eg~ 0.3 eV) appears in the band structure at the Co layer thickness of less than 3 ML. The metallic properties of the Co film manifest themselves at a thickness of more than 4-5 ML. Heating the Co/Si(111) system at T=900 K leads to the formation of nanophases and CoSi2 nanofilms. The Eg value is 0.8 eV for the CoSi2 nanophases with theta~ 3 ML and 0.6 eV for the CoSi2 film. Keywords: nanophase, epitaxy, low-energy bombardment, surface, single crystal, island growth, ion dose, degree of coverage.
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