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Nonlinear effects in the sputtering of gallium arsenide and silicon by bismuth cluster ions
Tolstoguzov A. B.
1,2,3, Mazarov P. A.4, Ieshkin A. E.
5, Meyer F.4, Fu D. J.3
1Ryazan State Radio Engineering University, Ryazan, Russia
2Center for Physics and Technological Research, Universidade Nova de Lisboa, Caparica, Portugal
3Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and Hubei Key Laboratory of Nuclear Solid Physics, School of Physics and Technology, Wuhan University, Wuhan, China
4Raith GmbH, Dortmund, Germany
5Lomonosov Moscow State University, Moscow, Russia
2Center for Physics and Technological Research, Universidade Nova de Lisboa, Caparica, Portugal
3Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and Hubei Key Laboratory of Nuclear Solid Physics, School of Physics and Technology, Wuhan University, Wuhan, China
4Raith GmbH, Dortmund, Germany
5Lomonosov Moscow State University, Moscow, Russia
Email: a.tolstoguzov@fct.unl.pt, Paul.Mazarov@raith.de, ieshkin@physics.msu.ru, fabian.meyer@raith.de, djfu@whu.edu.cn
An experimental study on the influence of the energy and the number of atoms in the bombarding ions Bin+ (n=1-4) on the sputter yield of GaAs was carried out. It was shown that the specific sputter yield Ysp non-additively increases with increasing n and specific kinetic energy Esp per an atom in the bombarding ion, and the efficiency of energy transfer from bombarding ions to target atoms also increases with increasing n. A comparison was made with the previously obtained results for Si targets. Keywords: ion sputtering, non-additivity factor, cluster ions, bismuth.
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