Technical Physics Letters
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In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114-170 and 210-1100 nm wavelength ranges
Aruev P. N.
1, Belik V. P.
1, Blokhin A. A.
1, Zabrodskii V. V.
1, Nikolaev A. V.1, Sakharov V. I.
1, Serenkov I. T.
1, Filimonov V. V.1, Sherstnev E. V.
1
1Ioffe Institute, St. Petersburg, Russia
Email: sildet@mail.ioffe.ru, v.belik@mail.ioffe.ru, bloalex91@yandex.ru, A.V.Nikolaev@mail.ioffe.ru
An avalanche silicon photodiode has been developed for the near IR, visible, UV and VUV light ranges. The external quantum efficiency has been studied in the 114-170 and 210-1100 nm ranges. It has been demonstrated that the avalanche photodiode reaches the quantum yield of 29 to 9300 electrons/photon at the 160 nm wavelength and bias voltage of 190-303 V, respectively. Keywords: avalanche photodiode, vacuum ultraviolet, visible light range, near IR, silicon
- P.N. Aruev, V.P. Belik, V.V. Zabrodskii, E.M. Kruglov, A.V. Nikolaev, V.I. Sakharov, I.T. Serenkov, V.V. Filimonov, E.V. Sherstnev, Tech. Phys., 65 (8), 1333 (2020). DOI: 10.1134/S1063784220080022
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