Optimization of fabrication processes for Nb, NbN, NbTiN films and high-quality tunnel junctions for terahertz receiving circuits.
A.M. Chekushkin1, L.V. Filippenko1, A.A. Lomov2, Liu Dong3, Shi Sheng-Cai3, V.P. Koshelets1
1Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
2Valiev Institute of Physics and Technology of RAS, Moscow, Russia
3Purple Mountain Observatory, CAS, 2 West Beijing Rd, Nanjing, Chin
Email: chekushkin@hitech.cplire.ru

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This paper describes the optimization of the existing technology for the fabrication of superconducting films and high-quality tunnel junctions on a magnetron sputtering facility. To expand the frequency range to 1.1 THz and to obtain the limiting parameters of superconducting elements, the regimes of production of Nb, NbN, NbTiN films were optimized. These films are used to fabricate superconductor-insulator-superconductor Nb/Al-AlN/NbN tunnel junctions. Al and NbTiN films are required to create receiving elements at frequencies above 700 GHz (the cutoff frequency for niobium); such structures are being developed for the radio astronomy array receiver located in the Atacama Pathfinder Experiment telescope. Keywords: superconductivity, tunnel junctions, magnetron sputtering, thin films.
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