Structural changes and depth redistribution of implanted In and As dopants in Si during steady-state and pulsed heat treatment
R.I. Batalov1, V.V. Bazarov1, E.M. Begishev1, V.F. Valeev1, V.I. Nuzhdin1, F.F. Komarov2, I.K. Chupris 2
1Zavoisky Kazan Physical-Technical Institute, Federal Research Center Kazan Scientific Center of Russian Academy of Sciences, Kazan, Russia
2A.N. Sevchenko Institute of Applied Physical Problems of the Belarusian State University, Minsk, Belarus
Email: batalov@kfti.knc.ru
Formation of nanoparticles of narrow-bandgap indium arsenide (InAs) in a subsurface region of single crystal silicon (Si) is one of approaches to extend optical absorption and a photoresponse of Si to the near- and mid-infrared range (λ = 1.1-3.5 μm). The InAs nanoparticles can be synthesized by High-Dose Ion Implantation with subsequent steady-state or pulsed annealing. Rutherford Backscattering of helium ions was used to study a depth distribution of a concentration of the introduced dopant and a location of subsequently implanted ions In+ (30 keV, 2· 1016 cm-2) and As+ (25 keV, 2· 1016 cm-2) in the Si crystal lattice before and after various thermal impacts in solid-phase and liquid-phase modes. We have found thermal impact modes, at which the disturbed Si crystal structure is restored in the best way and conditions are created for synthesis of the InAs phase with the highest overlapping of profiles of the concentrations of the dopant atoms. Keywords: silicon, indium arsenide, melting, crystallization, diffusion, segregation, Rutherford backscattering.
- S. Zi. Fizika poluprovodnikovykh priborov: v 2-kh kn. (Mir, M., 1984), kn. 1
- A. Luque, A. Marti, C. Stanley. Nat. Phot., 6, 146 (2012). DOI: 10.1038/nphoton.2012.1
- Electronic source. NSM Archive --- Physical Properties of Semiconductors. Available at: http://www.matprop.ru/
- Z. Mamiyev, N.O. Balayeva. Mater. Today Sustain., 21, 100305 (2023). DOI: 10.1016/j.mtsust.2022.100305
- A. Rogalski. Rep. Progress Phys., 68, 2267 (2005). DOI: 10.1088/0034-4885/68/10/R01
- F. Komarov, L. Vlasukova, W. Wesch, A. Kamarou, O. Milchanin, S. Grechnyi, A. Mudryi, A. Ivaniukovich. Nucl. Instrum. Meth. Phys. Res. B, 266, 3557 (2008). DOI: 10.1016/j.nimb.2008.06.010
- L. Rebohle, R. Wutzler, S. Prucnal, R. Hubner, Y.M. Georgiev, A. Erbe, R. Bottger, M. Glaser, A. Lugstein, M. Helm, W. Skorupa. Phys. Stat. Sol. C, 14, 1700188 (2017). DOI: 10.1002/pssc.201700188
- I.E. Tyschenko, V.A. Volodin, A.G. Cherkov, M. Stoffel, H. Rinnert, M. Vergnat, V.P. Popov. J. Luminescence, 204, 656 (2018). DOI: 10.1016/j.jlumin.2018.08.057
- F. Komarov, L. Vlasukova, O. Milchanin, W. Wesch, E. Wendler, J. Zuk, I. Parkhomenko. Mater. Sci. Engin.: B, 178, 1169 (2013). DOI: /10.1016/j.mseb.2013.07.011
- A.V. Dvurechenskii, G.A. Kachurin, E.V. Nidaev, L.S. Smirnov. Impulsnyi otzhig poluprovodnikovykh materialov (Nauka, M., 1982) (in Russian)
- F.F. Komarov, O.V. Mil'chanin, I.N. Parchomenko, P.V. Kuchinskii, A.E. Al'zhanova, M.A. Mokhovikov, E. Wendler. J. Engin. Phys. Thermophys., 97, 745 (2024). DOI: 10.1007/s10891-024-02946-7
- R.I. Batalov, V.V. Bazarov, V.I. Nuzhdin, V.F. Valeev, H.A. Novikov, V.A. Shustov, K.N. Galkin, I.B. Chistokhin, F.F. Komarov, O.V. Milchanin, I.N. Parkhomenko. J. Appl. Spectr., 91, 1225 (2025). DOI: 10.1007/s10812-025-01841-0
- M. Mayer. SIMNRA user's guide, Max-Planck-Institut fur Plasmaphysik, 1997
- Electronic source. The Stopping and Range of Ions in Matter. Available at: http://www.srim.org/
- R.I. Batalov, E.A. Marfin, D.D. Zaitsev. Inzh. fiz. zhurn., 3 (v pechati) (2026) (in Russian)
- V.M. Glazov, V.S. Zemskov. Fiziko-khimicheskie osnovy legirovaniya poluprovodnikov (Nauka, M., 1967) (in Russian).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.