Optimization of ion etching processes in micro- and nanoelectronics by influencing on the energy spectrum of ions
Khalilullin R.R.1, Kuzmenko V.O. 1, Miakonkikh A.V.1
1NRC “Kurchatov institute” - Valiev IPT, Moscow, Russia
Email: khalilullin@ftian.ru

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The possibility of optimization of Atomic Layer Etching through control of the ion energy spectrum in inductively coupled plasma in Argon and its mixtures with Xe was investigated. A hybrid model was developed in COMSOL software using probe diagnostics data. Increasing the bias voltage amplitude linearly raises the average ion energy, while higher oscillation frequency narrows the ion energy distribution function. The addition of Xe reduces silicon etching rates which can be used to increase synergy in the atomic layer etching process. The maximum etching rate is achieved in pure argon plasma; however, the broader ion energy distribution function increases the risk of substrate damage. The results demonstrate the feasibility of tailoring ion energy distribution function to minimize parasitic sputtering in atomic layer etching processes. Keywords: Atomic layer etching, inductively coupled plasma, ion energy distribution function, RF bias, Ar plasma, Ar/Xe mixture, ion sputtering.
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