Mahmoodian Mehrdad M.
1,2, Mahmoodian M. M.1,2, Entin M. V.1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: m.makhmudian1@g.nsu.ru, mahmood@isp.nsc.ru, entin@isp.nsc.ru
Modern flash memory operates through the confinement (trapping) of electrons at defect sites within a dielectric layer, which modulates the resistance of a two-dimensional semiconductor channel. In this work, we numerically investigate structural ordering - Wigner crystallization of localized electrons in deep trapping sites. The angular distribution function of these electrons confirms their Wigner localization. Keywords: Wigner cluster, flash memory, localized electrons, angular distribution function.
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Дата начала обработки статистических данных - 27 января 2016 г.