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Development of technology for creating photonic ICs with ring microresonators based on Si/SiO2/Si3N4
Russian version
Abanin A. I.1,2,3, Ryazanov R. M.1, Golikov A. D.4,5, Kovalyuk V. V.4,6, Venediktov I. O.4,6, An P. P.4,5, Shimlovskaya D. A.7, Kitsyuk E. P.1, Kosolobov S. S.7, Lazarenko P. I.3, Goltsman G. N.6,8, Svetukhin V. V.1
1 Scientific-Manufacturing Complex “Technological Centre”, Moscow, Zelenograd, Russia
2Ulyanovsk State University, Ulyanovsk, Russia
3National Research University of Electronic Technology, Zelenograd, Moscow, Russia
4National University of Science and Technology MISiS, Moscow, Russia
5Moscow Pedagogical State University, Moscow, Russia
6National Research University Higher School of Economics, Moscow, Russia
7Skolkovo Institute of Science and Technology, Moscow, Russia
8Russian Quantum Center, Moscow, Russia
Email: aai-2000@mail.ru
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The development of modern information processing systems is limited by the speed of electronic circuits. The implementation of high-speed information processing of the next generation becomes an extremely difficult task while using a traditional electronic component database. One of the possible solutions to this problem is developing systems based on photonic integrated circuits. In this paper, we present the results of manufacturing high-Q ring resonators based on silicon nitride. Optical devices were manufactured on Si/SiO2/Si3N4 substrates, using fabrication equipment of the SMC "Technological Centre". In this work, we studied the dependence of optical properties of structures on different deposition methods for silicon nitride, as well as the use of high-temperature annealing. Samples of ring resonators with >105 and ring radius of ~64 μm microns are demonstrated. Keywords: Silicon nitride, ring resonator, LPCVD, Q-factor.
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