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Optical characteristics of boron-doped silicon wafers after rapid thermal annealing
Russian version
Staskov N. I. 1, Sergeychik A. A. 2, Sotsky A. B. 1, Pyatlitsky A. N. 2, Pilipenko V. A. 2, Sotskaya L. I. 3, Ponkratov D. V. 1, Chudakov E. A. 1, Shilov A. V. 1
1Kuleshov State University, Mogilev, Belarus
2State Center “Belmicroanalysis” Scientific and Technical Center JSC “INTEGRAL”, Minsk, Belarus
3Belarusian–Russian University, Mogilev, Belarus
Email: ni_staskov@mail.ru, ab_sotsky@mail.ru, li_sotskaya@tut.by, d.v.ponkratov@yandex.by, kenni_mark@bk.ru, undersv@yandex.ru
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Optical properties of boron-doped silicon wafers KDB-12 with one matte surface subjected to rapid thermal annealing are investigated by spectral ellipsometry. The influence of the known surface oxide layer is excluded in the algorithm for calculating the permittivity of the semiconductor substrate. The band gap width and Urbach energy are calculated. The spectra of the real and imaginary parts of the permittivity are shifted relative to the corresponding spectra of c-Si to the short-wave region. The band of the imaginary part of the permittivity in the region of the second singularity point consists of several bands. Keywords: permittivity spectra, refractive and absorption indices, band gap, Urbach energy, boron-doped silicon.
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