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Optical properties of indium-doped Hg0.3Cd0.7Te epitaxial films
Russian version
Ruzhevich M. S.1, Mynbaev K. D.2, Bazhenov N. L.2, Dorogov M. V.1, Varavin V. S.3, Remesnik V. G.3, Uzhakov I. N.3, Mikhailov N. N.3
1ITMO University, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: max.ruzhevich@niuitmo.ru
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The article presents the results of studying the optical properties of Hg0.3Cd0.7Te films grown by molecular beam epitaxy and doped with indium. Optical reflectance and transmittance methods, as well as photoluminescence, are used for the study. According to the photoluminescence data, the introduction of indium lead to the formation of a donor level with an ionization energy of 10-12 meV. Films with an indium concentration 1016-1017 cm-3 showed the stability of their optical properties during thermal annealing, including films in the HgTe/Hg0.3Cd0.7Te heterocomposition. At indium concentrations >1018 cm-3, this stability is lost due to the interaction of the impurity with intrinsic defects. Keywords: HgCdTe, doping, defects, photoluminescence.
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