Cathodoluminescence of HPHT type IIa diamond with boron concentration up to 0.03 ppm
Kravets V. A.1, Klepikov I.V.2,3,4, Vasilyev E.A. 5
1Ioffe Institute, St. Petersburg, Russia
2LLC NPK “Almaz”, Saint-Petersburg, Russia
3 "Diamond UHF-electronics" laboratory of RTU MIREA, Moscow, Russia
4St. Petersburg State University, St. Petersburg, Russia
5St. Petersburg Mining University, St. Petersburg, Russia
Email: vladislav2033@yandex.ru
A study was carried out of a single-crystal multi-sector plate of type IIb HPHT diamond with a minimum boron level detectable by IR absorption spectra. In the growth sectors 111 and 110, the boron concentration was 0.03 and 0.01 ppm. In the growth sectors 100, 113, 115, the boron concentration is lower than the detection limit by absorption spectra. In the cathodoluminescence spectra of all sectors at a temperature of 77 K, broad structureless bands with maxima at 2.3 and 3.3 eV were revealed. The band with a maximum at 2.3 eV has two components with decay times in the ranges of 5-14 μs and 0.2-2 μs, respectively, differing in different growth sectors. The decay time of the band with a maximum of 3.3 eV is less than 100 ns. A difference in the intensity of luminescence of the sectors upon excitation by light of 220 nm and cathodoluminescence was revealed. The intensity of photoluminescence is minimal in the 110 and 115 sectors, and the cathodoluminescence of the 110 sector is the most intense. Comparison with previous studies showed that with a decrease in the boron concentration in HPHT diamond, the intensity and decay time of CL decrease. Keywords: IR spectroscopy, growth sector, luminescence properties, lifetimes.
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