Physics of the Solid State
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The effect of the thickness of a single-crystal SrTiO3 film on its structure and dielectric parameters in the range of 0.3-1.5 THz
Pavlenko A. V.
1,2, Nikolaev N. A.
3, Stryukov D. V.
1, Rybak A. A.
3, Bobylev V. A.
2
1Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Rostov-on-Don, Russia
2Southern Federal University, Rostov-on-Don, Russia
3Institute of Automation and Electrometry, Siberian BranchRussian Academy of Sciences, Novosibirsk, Russia
2Southern Federal University, Rostov-on-Don, Russia
3Institute of Automation and Electrometry, Siberian BranchRussian Academy of Sciences, Novosibirsk, Russia
Email: Antvpr@mail.ru, nazar@iae.nsk.su, strdl@mail.ru, a.rybak1@g.nsu.ru, bobylev@sfedu.ru
Single-crystal thin films of strontium titanate (SrTiO3, STO) of various thicknesses (h): 60 nm, 120 nm and 270 nm were grown on Al2O3(001) substrates using the RF sputtering method. Using X-ray diffraction analysis, it is shown that all STO films are characterized by a pseudo-cubic cell, and have the same deformation of the unit cell. Using the method of terahertz time-domain spectroscopy, it is shown that in the frequency range 0.3-1.5 THz, films are characterized by practically no dispersion of the real (ε') and imaginary ε'' parts of the dielectric constant, but as h decreases, there is a significant increase in ε' at comparable ε''. Keywords: thin films, dielectric characteristics, heteroepitaxy, STO, terahertz time-domain spectroscopy.
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