Effect of synthesis conditions on the structure and optical properties of a-C:H films
Ryaguzov A. P.1, Assembayeva A. R.1,2, Bekmurat F.1, Nemkayeva R. R.1, Kadir M. F.1
1National Open-Type Nanotechnology Laboratory al-Farabi Kazakh National University, Almaty, Kazakhstan
2Kazakh National Technical Research University, Almaty, Kazakhstan
Email: a.assembayeva@satbayev.university
The results of the study on amorphous hydrogenated carbon (a-C:H) films obtained by magnetron sputtering are presented. The influence of ion-plasma discharge power on the formation of the local structure of a-C:H films was investigated using Raman scattering spectroscopy. The paper demonstrates how the synthesis conditions affect the sp2/sp3- bond ratio in the formation of the a-C:H film structure and, as a result, the change in their optical properties. The optical band gap values for a-C:H films synthesized at different discharge power levels were calculated. It was found that increasing the ion-plasma discharge power from 12 to 18 W leads to a decrease in the optical band gap from 1.8 to 1.43 eV. Keywords: amorphous hydrogenated diamond-like carbon films, magnetron sputtering, raman spectroscopy, optical band gap.
- A.C. Ferrari, J. Robertson. Philosophical Transactions Royal Society of London. Series A: Math., Phys. Eng. Sci., 362 (1824), 2477 (2004). DOI: 10.1098/rsta.2004.1452
- W.E.S.S. Viana, A.E. Elzubair, M.M. Wysard, D.F. Franceschini, S.S. Camargo. Thin Solid Films, 695, 137733 (2020). DOI: 10.1016/j.tsf.2019.137733
- I.S. Kim, Ch.-E. Shim, S.W. Kim, Ch.-S. Lee, J. Kwon, K.-E. Byun, U. Jeong. Adv. Mater., 35 (43), 2204912 (2023). DOI: 10.1002/adma.202204912
- J. Li, H. Chae. Korean J. Chem. Eng., 40 (6), 1268 (2023). DOI: 10.1007/s11814-023-1443-x
- S. Karmakar, M.A. Halim, M. Sultana, P.K. Sarkar, I.H. Emu, A.M. Jaimes-Leal, A. Haque. Diamond Related Mater., 146, 111196 (2024). DOI: 10.1016/j.diamond.2024.111196
- M. Steinhorst, M. Giorgio, T. Roch, Ch. Leyens. ACS Appl. Mater. Interfaces, 15 (44), 51704 (2023). DOI: 10.1021/acsami.3c10719
- A.P. Ryaguzov, R.R. Nemkayeva, O.I. Yukhnovets, N.R. Guseinov, S.L. Mikhailova, F. Bekmurat, A.R. Assembayeva. Opt. Spectr., 127, 251 (2019). DOI: 10.1134/S0030400X19080228
- A.P. Ryaguzov, B.E. Alpysbayeva, R.R. Nemkayeva, R.K. Aliaskarov, O.I. Yukhnovets, D.M. Mamyrbayeva. Eurasian Phys. Tech. J., 12, 2(24), 48 (2015)
- J. Robertson. Diamond Related Mater., 4 (4), 297 (1995). DOI: 10.1016/0925-9635(94)05264-6
- J. Robertson. Diamond Related Mater., 3 (4-6), 361 (1994). DOI: 10.1016/0925-9635(94)90186-4
- A.C. Ferrari, J. Robertson. Phys. Rev. B, 61, 14095 (2000). DOI: 10.1103/PhysRevB.61.14095
- A.P. Ryaguzov, G.A. Yermekov, T.E. Nurmamytov, R.R. Nemkayeva, N.R. Guseinovet, R.K. Aliaskarov. J. Mater. Res., 31, 127 (2016). DOI: 10.1557/jmr.2015.391
- A.C. Ferrari. Diamond Related Mater., 11 (3-6), 1053 (2002). DOI: 10.1016/S0925-9635(01)00730-0
- C. Casiraghi, A.C. Ferrari, J. Robertson. Phys. Rev. B, 72 (8), 085401 (2005). DOI: 10.1103/PhysRevB.72.085401
- C. Casiraghi, F. Piazza, A.C. Ferrari, D. Grambole, J. Robertson. Diamond Related Mater., 14 (3-7), 1098 (2005). DOI: 10.1016/j.diamond.2004.10.030
- J. Tauc. Progr. Semiconductors, 9, 87 (1965). DOI: 10.3367/UFNr.0094.196803e.0501
- J. Robertson, E.P. O'Reilly. Phys. Rev. B, 35 (6), 2946 (1987). DOI: 10.1103/physrevb.35.2946
- Sh.Sh. Sarsembinov, O.Yu. Prikhodko, A.P. Ryaguzov, S.Ya. Semicond. Sci. Technol., 16, 872 (2001). DOI: 10.1088/0268-1242/16/10/310
- M. Chhowalla, J. Robertson, C.W. Chen, S.R.P. Silva, C.A. Davis, G.A.J. Amaratunga, W.I. Milne. J. Appl. Phys., 81 (1), 139 (1997). DOI: 10.1063/1.364000
- J. Robertson. Mat. Sci. Eng. R, 37 (4-6), 129 (2002). DOI: 10.1016/S0927-796X(02)00005-0
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.