Dependence of AC electrical resistivity on the thickness of the DLC layer in In/DLC//Si/In nanostructure
Zur I. A.1, Leonenko V. Yu.1, Fedotov A. K.1, Shmanay Y. Y.1, Kharchanka A. A.1, Gorbachuk N. I.2, Ermakova K. A.2, Titova S. S.3, Chuvenkova O. A.3, Turishchev S. Yu.3, Fedotova J. A.1, Movchan S. A.4
1Institute for Nuclear Problems, Belarusian State University, Minsk, Belarus
2Faculty of Physics of Belarusian State University, Minsk, Belarus
3Voronezh State University, Voronezh, Russia
4Joint Institute for Nuclear Research, Dubna, Russia
Email: zur.ilya01@gmail.com, vs.4550817@gmail.com, akf1942@gmail.com, ouik9970@gmail.com, xaatm@mail.ru, gorbachuk@bsu.by, ermakova.katherina@yandex.ru, titova@phys.vsu.ru, chuvenkova@phys.vsu.ru, tsu@phys.vsu.ru, julia@hep.by, movchansa57@gmail.com
As the thickness of the DLC layer increased from 22 to 46 nm, a corresponding rise in number of carbon atoms with the sp2 hybridization of electron orbitals from 9% to 21% was observed, by analyzing the X-ray photoelectron spectroscopy (XPS) measurements. Moreover, negligible nitriding and oxidation of the DLC surface was confirmed via X-ray photoelectron spectroscopy. An equivalent electrical circuit is proposed to describe the impedance frequency dependences of the DLC coating as well as the potential barrier at the DLC//Si interface. In the quasistatic limit, the resistivity of the DLC layer decreases from 1000 to 1 Ω·m as the thickness increases from 22 to 71 nm. It has been demonstrated that the impedance of the In/DLC//Si/In structure can change by a factor of 20 when the bias voltage varies between -4-+4 V relative to the Si substrate. Keywords: DLC coatings, X-ray photoelectron spectroscopy, impedance spectroscopy, equivalent circuit, zone diagram, electrical resistance.
- M. Shamsa, W. Liu, A. Balandin, C. Casiraghi, W. Milne, A. Ferrari. Appl. Phys. Lett. 89, 161921 (2006)
- F. Stock, F. Antoni, F. Le Normand, D. Muller, M. Abdesselam, N. Boubiche, I. Komissarov. Appl. Phys. A 123, 590 (2017)
- I.A. Zur, E.E. Shmanai, Yu.A. Fedotova, A.A. Kharchenko, S.A. Movchan. FTT 65, 49 (2023). (in Russian)
- A. Grill, V. Patel, S. Cohen. Diam. Relat. Mater. 3, 281 (1994)
- http://www.dlc.ru/oblasti-primeneniya/detali-i-mehanizmy/
- C.R. Lin, D.H. Wei, C.K. Chang, W.H. Liao. Phys. Procedia 18, 46 (2011)
- P.A.Avgustovsky. Innovatsionnye tekhnologii i obrazovanie --- 2022 --- S. 288-291. (in Russian)
- Y. Deng. https://proleantech.com/ru/dlc-coating-comprehen- sive-guide/
- J. Metcalfe, I. Mejia, J. Murphy, M. Quevedo, L. Smith, J. Alvarado, B. Gnade, H. Takai. arXiv:1411.1794 [Hep-Ex, Physics:Physics] (2014)
- A.A. Kharchenko, I.A. Zur, Yu.A. Fedotova, Khimiya vysokikh energiy 56, 378 (2022). (in Russian)
- I. Zur, Y. Shmanay, J. Fedotova, G. Remnev, S. Movchan, V. Uglov, Diam. Relat. Mater. 142, 110802 (2024)
- I.A. Zur, A.S. Fedotov, A.A. Kharchanka, Y.E. Shmanay, J.A. Fedotova, S.A. Movchan. Nonlinear Phenomena in complex systems 26, 4, 393-400 (2023)
- Y.S. Zou, Q.M. Wang, H. Du, G.H. Song, J.Q. Xiao, J. Gong, C. Sun, L.S. Wen. Appl. Surf. Sci. 241, 295 (2005)
- C.K. Park, S.M. Chang, H.S. Uhm, S.H. Seo, J.S. Park. Thin Solid Films 420--421, 235 (2002)
- N. Dwivedi, S. Kumar, H.K. Malik, Govind, C.M.S. Rauthan, O.S. Panwar, Applied Surface Science 257, 6804 (2011)
- B. Lesiak, N. Rangam, P. Jiricek, I. Gordeev, J. Toth, L. Kover, M. Mohai, P. Borowicz, Front. Chem. 7 (2019)
- P. Merel, M. Tabbal, M. Chaker, S. Moisa, J. Margot. Appl. Surf. Sci. 136, 105 (1998)
- H. Sheng, W. Xiong, S. Zheng, C. Chen, S. He, Q. Cheng. Carbon Lett. 31, 929 (2021)
- F. Xiao, W. Li, L. Fang, D. Wang. J. Hazard. Mater., 308, 11 (2016)
- W. Xiaoqiang, Z. Xu, H. Xiangyi, T. Yingjian, W. Haojie, F. Haoran, L. Huimin. Sci. Rep. 14 (2024)
- N. Kametani, M. Nakamura, K. Yashiro, T. Takaki. Comput. Mater. Sci. 209, 111420 (2022)
- https://russkijmetall.ru/redkozemelnyy-metall-i-dr/kremniy- metallicheskiy/kremniy-kristallicheskiy/kremniy-monokri- stallicheskiy/plastiny-kremniya-monokristallicheskogo-kef/
- A. Evtukh, V.G. Litovchenko, M. Strikha, A. Kurchak, O. Yilmazoglu, H. Hartnagel. Ukr. J. Phys. 62, 526 (2017)
- L. Hao, Y. Liu, W. Gao, Z. Han, Q. Xue, H. Zeng, Z. Wu, J. Zhu, W. Zhang. J. Appl. Phys. 117, 114502 (2015)
- Yu.V. Emelyanova, M.V. Morozova, Z.A. Mikhailovskaya, E.S. Buyanova. Impedansnaya spektroskopiya: teoriya i primenenie (Izdatelstvo Uralskogo universiteta, Yekaterinburg, 2017). (in Russian).