Physics of the Solid State
Volumes and Issues
One-dimensional carbon structures formed on transition metal oxides
Davydov S.Yu.1
1Ioffe Institute, St. Petersburg, Russia
Email: sergei_davydov@mail.ru

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We consider epitaxial cumulene as a carbon chain formed in a groove on a transition metal oxide (TMO) face. A simple model of the density of states of TMO is proposed. A model of a one-dimensional analogue of graphene oxide (1DGO) has been constructed, which is a decorated cumulene, every second atom of which is bonded to an oxygen atom (C2O). It has been shown that decoration leads to the opening of a gap in the electronic spectrum. Estimates of the influence of the TMO substrate (TiO2) on the spectral characteristics, effective masses, and densities of states of cumulene and 1DGO are presented. Keywords: cumulene, transition metal oxides, graphene oxide, electron spectrum.
  1. J. Nevalaita, P. Koskinen. Phys. Rev. B 97, 3, 035411 (2018)
  2. S. Haastrup, M. Strange, M. Pandey, T. Deilmann, P.S. Schmidt, N.F. Hinsche, M.N. Gjerding, D. Torelli, P.M. Larsen, A.C. Riis-Jensen, J. Gath, K.W. Jacobsen, J.J. Mortensen, T. Olsen, K.S. Thygesen. 2D Mater. 5, 4, 042002 (2018)
  3. N. Briggs, S. Subramanian, Z. Lin, X. Li, X. Zhang, K. Zhang, K. Xiao, D. Geohegan, R. Wallace, L.-Q. Chen, M. Terrones, A. Ebrahimi, S. Das, J. Redwing, C. Hinkle, K. Momeni, A. van Duin, V. Crespi, S. Kar, J.A. Robinson. 2D Mater. 6, 2, 022001 (2019)
  4. L. Vannucci, U. Petralanda, A. Rasmussen, T. Olsen, K.S. Thygesen. J. Appl. Phys. 128, 10, 105101 (2020)
  5. M. Fukuda, J. Zhang, Y.-T. Lee, T. Ozakia. Mater. Adv. 2, 13, 4392 (2021)
  6. S.Yu. Davydov. Semiconductors 53, 7, 954 (2019)
  7. S.Yu. Davydov. Tech. Phys. Lett. 45, 650 (2019)
  8. S.Yu. Davydov. Phys. Solid State 66, 5, 701 (2024)]
  9. V.E. Henrich, P.A. Cox. The Surface Science of Metal Oxides. Cambridge Univ. Press (1994)
  10. H.-J. Freund, H. Kuhlenbeck, V. Staemmler. Rep. Prog. Phys. 59, 3, 283 (1996)
  11. R. Gillen, J. Robertson. J. Phys.: Condens. Matter 25, 16, 165502 (2013)
  12. S. Lany. Phys. Rev. 87, 8, 085112 (2013)
  13. S. Lany. J. Phys.: Condens. Matter 27, 28, 283203 (2015)
  14. Y. Guo, L. Ma, K. Mao, M. Ju, Y. Bai, J. Zhao, X.C. Zeng. Nanoscale Horizons 4, 3, 592 (2019). https://doi.org/10.1039/c8nh00273h
  15. W. Li, J. Shi, K.H.L. Zhang, J.L. MacManus-Driscoll. Material Horizons 7, 11, 2832 (2020). https://doi.org/10.1039/D0MH00899K
  16. C. Rdl, F. Fuchs, J. Furthmuller, F. Bechstedt. Phys. Rev. B 79, 23, 235114 (2009)
  17. E. Engel, R.N. Schmid. Phys. Rev. Lett. 103, 3, 036404 (2009)
  18. S.Yu. Davydov. Phys. Solid State 58, 4, 804 (2016)
  19. F.D.M. Haldane, P.W. Anderson. Phys. Rev. B 13, 6, 2553 (1976)
  20. S.Yu. Davydov, S.V. Troshin. Phys. Solid State 49, 8, 1583 (2007)
  21. S.Yu. Davydov. Phys. Solid State 62, 2, 378 (2020)
  22. W.A. Harrison. Electronic Structure and the Properties of Solids. W.H. Freeman \& Co., San Francisco (1980)
  23. W.A. Harrison. Phys. Rev. B 27, 6, 3592 (1983)
  24. W.A. Harrison, G.K. Straub. Phys. Rev. B 36, 5, 2695 (1987)
  25. Fizicheskiye velichiny. Spravochnik / Pod. red. I.S. Grigoriyeva, Ye.Z. Meylikhova. Energoatomizdat, M. (1991). (in Russian)
  26. K.A. Mkhoyan, A.W. Contryman, J. Silcox, D.A. Stewart, G. Eda, C. Mattevi, S. Miller, M. Chhowalla. Nano Lett. 9, 3, 1058 (2009)
  27. A.T. Smith, A.M. LaChance, S. Zeng, B. Liu, L. Sun. Nano Mater. Sci. 1, 1, 31 (2019)
  28. P.P. Brisebois, M. Siaj. J. Mater. Chem. C 8, 5, 1517 (2020)
  29. K.Z. Donato, H.L. Tan, V.S. Marangoni, M.V.S. Martins, P.R. Ng, M.C.F. Costa, P. Jain, S.J. Lee, G.K.W. Koon, R.K. Donato, A.H. Castro Neto. Sci. Rep. 13, 1, 6064 (2023)
  30. A.H. Castro Neto, F. Guinea, N.M.R. Peres, R.S. Novoselov, A.K. Geim. Rev. Mod. Phys. 81, 1, 109 (2009)
  31. T.O. Wehling, E. Sastoglu, C. Friedrich, A.I. Lichtenstein, M.I. Katsnelson, S. Blugel. Phys. Rev. Lett. 106, 23, 236805 (2011)
  32. T. Susaki, A. Makishima, H. Hosono. Phys. Rev. B 84, 11, 115456 (2011)
  33. Z. Zhong, P. Hansmann. Phys. Rev. B 93, 23, 235116 (2016)
  34. K. Cieslik, D. Wrana, M. Rogala, C. Rodenbucher, K. Szot, F. Krok. Crystals 13, 7, 1052 (2023)
  35. M.I. Dar, A.K. Chandiran, M. Gratzel, M.K. Nazeeruddin, S.A. Shivashankar. J. Mater. Chem. A 2, 6, 1662 (2014)
  36. Y.E. Tasisa, T.K. Sarma, R. Krishnaraj, S. Sarma. Res. Chem. 11, 101850 (2024)
  37. D. Niesner, T. Fauster. J. Phys.: Condens. Matter 26, 39, 393001 (2014)
  38. Y.-J. Yu, Y. Zhao, S. Ryu, L.E. Brus, K.S. Kim, P. Kim. Nano Lett. 9, 10, 3430 (2009)
  39. F. Bechstedt, R. Enderlein. Semiconductor Surfaces and Interfaces. De Gruyter (1989)
  40. S.Yu. Davydov. Phys. Solid State 58, 6, 1222 (2016)
  41. J. Robertson. Eur. Phys. J. Appl. Phys. 28, 3, 265 (2004)
  42. G.M. Rignanese. J. Phys.: Condens. Matter 17, 7, R357 (2005)
  43. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur. Properties of Advanced Semiconductor Materials. Wiley, N.Y. (2001)
  44. R. Bessler, U. Duerigb, E. Koren. Nanoscale Adv. 1, 5, 1702 (2019)
  45. X. Huang, T. Leng, T. Georgiou, J. Abraham, R.R. Nair, K.S. Novoselov, Z. Hu. Sci. Rep. 8, 1, 43 (2018)
  46. E. Prokhorov, Z. Barquera-Bibiano, A. Manzano-Rami rez, G. Luna-Barcenas, Y. Kovalenko, M.A. Hernandez-Landaverde, B.E.C. Reyes, J.H. Vargas. Mater. Res. Express 6, 8, 085622 (2019)
  47. K. Yim, Y. Yong, J. Lee, K. Lee, H.-H. Nahm, J. Yoo, C. Lee, C.S. Hwang, S. Han. NPG Asia Materials 7, 6, e190 (2015)
  48. C. Verdi, F. Caruso, F. Giustino. Nature Commun. 8, 1, 15769 (2017)
  49. T.J. Smart, T.A. Pham, Y. Ping, T. Ogitsu. Phys. Rev. Mater. 3, 10, 102401(R) (2019)
  50. L. Zhang, W. Chu, C. Zhao, Q. Zheng, O.V. Prezhdo, J. Zhao. J. Phys. Chem. Lett. 12, 9, 2191 (2021)
  51. S.Yu. Davydov. Semiconductors 52, 2, 226 (2018)
  52. S.Yu. Davydov. Semiconductors 52, 3, 335 (2018).

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