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Mechanism of Growth of Ga2O3 Epitaxial Layers by Hydride Vapour-Phase Epitaxy on SiC/Si (110)
Russian version
KukushkinS. A. 1, Osipov A. V. 2, Ubyivovk E.V. 1,2, Osipova E. V. 1, Sharofidinov Sh.Sh.
1Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State University, St. Petersburg, Russia
Email: sergey.a.kukushkin@gmail.com, andrey.v.osipov@gmail.com, ubyivovk@gmail.com, sh.shams@mail.ioffe.ru
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The article studies the growth mechanisms of epitaxial films of β, ε and α phases of gallium oxide (Ga2O3) grown by hydride vapour-phase epitaxy (HVPE) on the surface of hybrid SiC/Si substrates synthesized by the method of coordinated atomic substitution (MCSA) on the surface (110) of silicon substrates. The growth of Ga2O3 layers occurred in a wide range of substrate temperatures from 550oC. The microstructure was analyzed using Raman spectroscopy and high-resolution transmission electron microscopy (TEM). The chemical composition (distribution of chemical elements) was determined using an X-ray spectrometer (EDS), which is an attachment to a scanning electron microscope (SEM). As a result of the studies, it was found that the growth of the Ga2O3 film on the SiC/Si (110) surface occurs in two stages. In the first stage, the SiC/Si (110) surface is enriched with carbon and saturated with silicon vacancies as a result of the interaction of chlorine, which is a product of the reaction of gallium chloride and oxygen, with the SiC/Si (110) surface. Only after the formation of a thin, approximately 1.5 nm thick, carbon layer on the SiC surface, the second stage begins, namely, the growth of the Ga2O3 layer begins. The growth of Ga2O3 begins with the introduction of oxygen atoms into the carbon layer, to which gallium atoms are then attached. After which the growth of the bulk Ga2O3 layer begins. Since the reaction between chlorine and SiC begins to occur noticeably only at temperatures above 700oC, then at lower temperatures no carbon layer is formed on the SiC surface, and accordingly, Ga2O3 layers do not nucleate. It has been suggested that in order to grow high-quality Ga2O3 films, the SiC surfaces must be modified before growth by covering them with either a thin carbon layer or a graphene layer. Keywords: silicon carbide on silicon, gallium oxide, and α, ε and β polytypes Ga2O3, graphene, carbon nanostructures, growth mechanisms.
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