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Isotopically Modified Silicon Carbide: A Semiconductor Platform for Quantum Technologies
Russian version
Mokhov E. N.1, Nagalyuk S. S. 1, Kazarova O. P.1, Dorojkin S. I.1, Soltamov V. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: Mokhov@mail.ioffe.ru, siclab@mail.ioffe.ru
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This paper discusses the trends and approaches in developing the material base for quantum technologies using silicon carbide enhanced through isotope engineering. A comprehensive review of international research projects focused on the study and development of isotopically modified silicon carbide as a cutting-edge platform for quantum technologies is presented. The paper includes results from the characterization of isotopically modified 2'' (2 inch) 28SiC produced at the Ioffe Institute, using secondary ion mass spectrometry, optical spectroscopy, and microwave spectroscopy. The study identifies two families of optically active spin centers in irradiated isotopically modified crystals: triplet centers (S=1), including divacancies (VSi-VC) and nitrogen-vacancy (NV) defects, and quadruplet centers (S=3/2), associated with negatively charged silicon vacancies (VSi-). These spin centers are widely utilized in the development of quantum sensors, qubits, and other quantum information technologies. The findings open new possibilities for exploring the properties of optically active high-spin centers in isotopically pure silicon carbide matrices. Keywords: Silicon Carbide, isotope engineering, Silicon vacancy, divacancy, NV- defect, microwave spectroscopy.
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