Low-temperature luminescence study of the formation of radiation defects in 4H-SiC Schottky diodes
Davydov V. Yu.
1, Smirnov A. N.
1, Eliseyev I.A.
1, Lebedev A. A.
1, Levinstein M. E.
1, Kozlovski V. V.
1,21Ioffe Institute, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: valery.davydov@mail.ioffe.ru, alex.smirnov@mail.ioffe.ru, ilya.eliseyev@mail.ioffe.ru, shura.lebe@mail.ioffe.ru, melevnimis@gmail.com, VKozlovski@spbstu.ru
The effect of electron and proton irradiation temperature on the formation of radiation defects in 4H-SiC Schottky diodes was studied using low-temperature photoluminescence spectroscopy. It has been established that the temperature at which irradiation is carried out significantly affects the formation of radiation defects in the base layer of n-4H-SiC diodes. This observation is in good agreement with the results of changes in the electrical properties of the same samples under the influence of proton and electron irradiation. Keywords: 4H-SiC Schottky diode, proton irradiation, electron irradiation, photoluminescence, electrical properties.
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