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Characteristics of Raman spectra of 2H-α-In2Se3 layered crystals of different thicknesses
Russian version
Eliseyev I.A. 1, Osochenko G. V.1, Smirnov A. N. 1, Davydov V. Yu. 1, Rakhlin M. V. 1, Kotova L. V. 1, Gasnikova K. A.1, Alekseev P. A. 1, Kitaev Yu. E. 1
1Ioffe Institute, St. Petersburg, Russia
Email: ilya.eliseyev@mail.ioffe.ru, osochenko_2000@mail.ru, alex.smirnov@mail.ioffe.ru, valery.davydov@mail.ioffe.ru, Rakhlin.Maxim@mail.ioffe.ru, Kotova@mail.ioffe.ru, gasponi_li@mail.ru, npoxep@gmail.com, Yu.Kitaev@mail.ioffe.ru
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The results of studies of the vibrational properties of layered α-In2Se3 crystals when the number of constituent layers is varied are presented. The joint analysis of Raman spectroscopy and atomic force microscopy data, followed by theoretical group analysis of vibrational modes, has allowed us to establish the patterns of changes in the parameters of spectral lines in the range of high and ultra-low (ω<50 cm-1) frequencies. It is shown for the first time that the position of the high-frequency line A1(3) (ω~200 cm-1) can be used to estimate the thickness of α-In2Se3 in the range of seven to several tens of layers. Keywords: 2D materials, indium selenide, Raman spectoscopy, vibrational properties.
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